NSBA144WF3T5G Allicdata Electronics
Allicdata Part #:

NSBA144WF3T5G-ND

Manufacturer Part#:

NSBA144WF3T5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 254MW SOT1123
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: NSBA144WF3T5G datasheetNSBA144WF3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06767
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123
Base Part Number: NSBA1*
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSBA144WF3T5G is a single, pre-biased transistor from the bipolar junction transistor (BJT) family. It has a wide range of applications and is suitable for use in consumer electronics, automotive products, and industrial equipment. It is designed to deliver high power and maximum reliability, while still maintaining a compact size.

A transistor is a type of electronic component that can switch current and control the flow of electrons. Unlike other electronic components, such as resistors, capacitors, and inductors, transistors can be used to amplify an electronic signal or to build a logic gate circuit. The NSBA144WF3T5G is a specialized, pre-biased solution designed to reduce the amount of design effort required to implement a high-power, highly-reliable switching solution in a product.

The NSBA144WF3T5G is a single, pre-biased n-p-n bipolar junction transistor (BJT) with a current transfer ratio (hfe) of up to 100. It features a 200V maximum collector-emitter voltage and a -65°C to +150°C operating temperature. It also has an extremely low on-state resistance, meaning it can deliver high power performance in an efficient manner.

The NSBA144WF3T5G provides an ideal solution for a wide range of design applications, including automotive electronic circuits, industrial motor control, and consumer electronic products. It can be used to control current in a variety of ways, including power switching, linear regulation, and push-pull logic functions. As a pre-biased solution, it has the ability to switch quickly and accurately, making it well-suited for applications that require precise timing.

The NSBA144WF3T5G’s working principle is based on three simple concepts: collector-base voltage, emitter-base voltage, and collector-emitter current. These three components form a circuit that creates a flow of current when a transistor is switched on. A voltage applied to the base of a transistor controls the current flow through the device. In a switching application, this can be used to turn a circuit on or off, or to control the current flow through a system.

The NSBA144WF3T5G is a specialized pre-biased solution for use in high power, highly-reliable switching applications in consumer electronics, automotive products, and industrial equipment. It features an optimized design and a low on-state resistance, which allows it to deliver a high level of performance while still maintaining a compact size. This transistor works by controlling the flow of electrons based on the three components of collector-base voltage, emitter-base voltage, and collector-emitter current, making it suitable for a wide range of applications and providing reliable, consistent performance.

The specific data is subject to PDF, and the above content is for reference

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