Allicdata Part #: | NSBA115TDP6T5G-ND |
Manufacturer Part#: |
NSBA115TDP6T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.408W SOT963 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | NSBA115TDP6T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06767 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Base Part Number: | NSBA1* |
Supplier Device Package: | SOT-963 |
Package / Case: | SOT-963 |
Mounting Type: | Surface Mount |
Power - Max: | 408mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NSBA115TDP6T5G is an integrated circuit (IC) that is part of a series of low voltage bipolar transistor arrays that are pre-biased towards a specific application. It is suitable for making digital or analog circuits in a wide range of applications.
The NSBA115TDP6T5G is an array of six integrated NPN transistors, each with an on-chip voltage regulator in order to maintain the operating current (IC) level for safe operation. Each transistor has a built-in base-emitter diode to suppress reverse voltage and voltage gradients. The chip has a simple topology, meaning that it requires fewer external components while providing numerous resistors, capacitors and transistors.
The NSBA115TDP6T5G has a supply voltage range of 8V to 80V, with a maximum power dissipation of 200 milliwatts per channel. Its temperature range is -55°C to 125°C, and it has a 1.8A peak collector current per channel with a breakdown voltage of 40V. It is ideal for use in automotive or industrial applications that require a reliable, low-cost solution.
The NSBA115TDP6T5G\'s working principle relies on the basic principles of bipolar transistors. Each transistor is made up of two p-type and one n-type semiconductor region, connected to form a junction. When a current is applied to the base region of the transistor, it modulates the current in the collector-emitter region, creating the desired current gain. This enables the circuit to use the transistor array to amplify signals, or to create logic control signals and digital functions.
The integrated current regulators ensure that the current in each channel is kept at a constant level, preventing the transistor array from overloading. This also allows the circuit to be used as an analog scaling amplifier, with the value of the current determining the gain. The pre-biased nature of the device allows it to meet the exact specifications of a given application without the need for external components.
The NSBA115TDP6T5G is a versatile transistor array that can be used in a variety of applications including audio amplifiers, level shifting, switching, signal amplification, and digital logic circuits. With its pre-biased design, it can be set up to optimize the operating parameters for any specific application quickly and easily.
The NSBA115TDP6T5G is an ideal solution for industrial and automotive applications that require an inexpensive and reliable transistor array. Its low voltage design, integrated current regulators, and wide temperature range makes it suitable for a variety of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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