NSBA143EDP6T5G

DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 5mA, 10V
Base Part Number:	NSBA1*
Supplier Device Package:	SOT-963
Package / Case:	SOT-963
Mounting Type:	Surface Mount
Power - Max:	408mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	4.7 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NSBA143EDP6T5G is a pre-biased array of bipolar junction transistors (BJTs). It is a three-terminal device that consists of two back-to-back series connected PNP transistors and three resistors. The resistor values used in the array are typically 5K, 10K, and 15K ohms.The most common uses for NSBA143EDP6T5G are high current switching, amplifier applications, and active loads. It offers both low-profile and power density advantages when compared to other BJT-based switches and drivers. In addition, NSBA143EDP6T5G has gained popularity in applications which require an active signal source with a very small size or footprint.NSBA143EDP6T5G consists of two PNP transistors, two emitter resistors, and a single collector resistor. The base of each transistor is connected to the collector resistor. The emitter of one transistor is connected to the emitter resistance, and the other transistor\'s emitter is connected to the collector resistor. The collector resistance is the third resistor in the array.The NSBA143EDP6T5G array has two common-base configurations. In the first configuration, both transistors have the same collector voltage. The second configuration is a common-emitter configuration where the transistors have different collector voltages.When the NSBA143EDP6T5G is loaded with current, it is able to produce a voltage gain of 15. This is done by diverting the current equally between the two transistors, resulting in an increase in voltage gain.The working principle of NSBA143EDP6T5G is based on the two-transistor amplifier principle. When current is applied to the base of the two transistors, the current is diverted equally to the collectors of each transistor. This sets up a positive feedback loop that increases the output signal from the array.The typical NSBA143EDP6T5G application field includes high current switching, amplifiers, active loads, frequency converters, and signal generators. In addition, the device is used for digital signal processing and signal sampling. In digital signal processing, the array is commonly used for analog-to-digital conversions, as it is capable of providing a large number of buffers, high-speed logic gates, and low-cost memory elements. In signal sampling applications, the NSBA143EDP6T5G array is used to provide high-speed, high resolution data acquisition.NSBA143EDP6T5G is a powerful, versatile and cost-effective three-terminal device, which finds applications in a wide range of electronic circuits. Its low-profile and high-power density advantages make it an ideal choice for applications requiring a small footprint and high current switching. It is also used in analog and digital signal processing, active loads, and frequency converters. With its two common-base configurations and its ability to produce a voltage gain of 15, the NSBA143EDP6T5G array is a great option for a variety of applications.

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