Allicdata Part #: | NSBA114EF3T5G-ND |
Manufacturer Part#: |
NSBA114EF3T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 254MW SOT1123 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSBA114EF3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06767 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 254mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1123 |
Supplier Device Package: | SOT-1123 |
Base Part Number: | NSBA1* |
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The NSBA114EF3T5G Transistor is a single, pre-biased bipolar junction transistor (BJT), which is one of the most versatile types of transistors available. This device is manufactured with a pre-biased base-emitter junction and a collector current that is specified for use in a wide range of applications.
A typical transistor consists of three terminals, the base, collector and emitter. The transistor acts as a switch in this type of circuit, because when there is current flowing through the base, the transistor turns on, allowing current to flow from the collector to the emitter. Transistors are used extensively in applications such as amplifiers, motor controls, switching, and digital logic applications. Using pre-biased transistors offers several advantages over using regular BJTs, which include improved performance, increased reliability, and lower power consumption.
The NSBA114EF3T5G has a standard alpha battery pack, which is a pre-biased type, and it has a power rating of 1000V. This pre-biased type is designed to handle higher voltages, and it can be used in applications such as low frequency switching, amplifier circuits and high frequency switching. The collector current of this type of transistor is specified at 20mA, which is ideal for use in motor control and amplifier circuits. The collector-emitter reverse voltage that this transistor can handle is 10V, which means that it can be used in circuits where higher voltage levels are present.
The NSBA114EF3T5G is also designed to be used in applications with high power levels. It has a large collector current rating of 10A, which means that it can be used in applications where the current must be switched on and off quickly or at even higher power levels. The power dissipation of this device is 70W, which again, allows it to be used in high power applications. The device also features a fast switching time of 25ns, which is fast enough for many digital and switching applications.
The NSBA114EF3T5G is a versatile, pre-biased type of transistor, which can be used for a variety of applications. It features a large current rating and a fast switching time, which make it ideal for many applications. It is important to choose the correct transistor for the application, as the wrong device can cause the circuit to become unstable or not perform as expected. The NSBA114EF3T5G offers the flexibility and versatility for many applications and its pre-biased type design makes it an ideal solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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