NSBA114TDP6T5G Discrete Semiconductor Products |
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| Allicdata Part #: | NSBA114TDP6T5GOSTR-ND |
| Manufacturer Part#: |
NSBA114TDP6T5G |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS 2PNP PREBIAS 0.408W SOT963 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
| DataSheet: |  NSBA114TDP6T5G Datasheet/PDF |
| Quantity: | 1000 |
| 8000 +: | $ 0.06152 |
| 16000 +: | $ 0.05755 |
| 24000 +: | $ 0.05292 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Base Part Number: | NSBA1* |
| Supplier Device Package: | SOT-963 |
| Package / Case: | SOT-963 |
| Mounting Type: | Surface Mount |
| Power - Max: | 408mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | -- |
| Resistor - Base (R1): | 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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Transistors - Bipolar (BJT) - Arrays, Pre-Biased – NSBA114TDP6T5G
The NSBA114TDP6T5G is an array of six pre-biased transistors, commonly known as BJT. This type of transistor has a few advantages, such as low power consumption, which means low energy costs and the ability to switch very quickly so that precise timing can be achieved. The NSBA114TDP6T5G is designed for applications that require high-speed signal switching, such as communication and image processing systems.The NSBA114TDP6T5G consists of six transistors that are pre-biased to deliver the correct voltage and current when required for quick, accurate signal switching. All of the transistors are constructed with two p-n junctions, one p-type and one n-type. The two junctions, when connected to electrical power, form a closed circuit and allow the current to flow through. The current flow is manipulated by a third element which is known as a base.When the voltage is supplied, the current will flow through the base and into the emitter, allowing the collector to be controlled by the base. The current can then be increased by applying a higher voltage to the base, or it can be decreased by allowing the current to decrease. The output current is then controlled by the base and emitter, and the voltage swing is determined by the collector-emitter voltage. The NSBA114TDP6T5G transistors are particularly suited to fast, very low power applications, as the speed and accuracy of signal switching are excellent. They are also used in applications that require very low voltages and high current output, as the width of the signal remains stable and does not decrease with voltage. This makes them a great choice for signal switching applications where reliability is the top priority.The NSBA114TDP6T5G transistors are used in a wide range of applications, including high-speed microcontrollers, wireless transmitters and receivers, automotive electronics, and more. They are also used in applications that require high-speed signal switching, such as communication and image processing systems.The NSBA114TDP6T5G is an excellent choice for applications requiring high-speed signal switching and accurate timing. The pre-biased transistors are capable of delivering precise signals, allowing the system to switch between different states with no risk of signal distortion or interference. This makes them a great choice for high-speed, reliable signal switching applications.
The specific data is subject to PDF, and the above content is for reference
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