Allicdata Part #: | NTB60N06L-ND |
Manufacturer Part#: |
NTB60N06L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 60A D2PAK |
More Detail: | N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surfac... |
DataSheet: | NTB60N06L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 150W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3075pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTB60N06L belongs to the family of 60V N-channel field-effect transistors (FETs) manufactured by ON Semiconductor, which are designed to optimize system efficiency and performance. This NTB60N06L is a N-channel enhancement mode FET typically used in applications such as DC/DC converters, motor drivers, audio amplifiers, and battery management systems.
The NTB60N06L is an enhancement mode FET, which means it is normally off when the gate voltage is low. It is important to note that the gate and source legs of the FET are insulated from each other; thus no current can flow from gate to source. This feature makes this device ideal for high-side switching applications because a negative voltage applied to the gate does not cause current flow from source to ground due to the insulation.
The NTB60N06L has a maximum drain-source voltage rating of 60V and a maximum drain current of 30A, making it ideal for applications that need to handle large amounts of current. Additionally, the low on-resistance of this FET makes it great for applications that require efficiency. The on-resistance is measured at a drain-source voltage of 10V and a drain current of 10A in the typical configuration.
In terms of capacitance, the NTB60N06L features various capacitance ratings depending on the drain-source voltage, which range from 175pF (10V) to 20pF (60V). This capacitance range is ideal for applications that require precise timing and control, such as power converters and other control-sensitive circuits.
In terms of operation, the NTB60N06L is a highly-efficient FET that operates on the principle of a voltage-controllable switch. When a voltage is applied to the gate terminal, the FET is turned on, allowing current to flow from drain to source. When the gate voltage is removed, the FET turns off and the current stops flowing. This feature makes the NTB60N06L ideal for controlling and switching large amounts of current in a variety of applications.
The NTB60N06L can be used in a variety of applications, including DC/DC converters, motor drivers, audio amplifiers, battery management systems, and so on. The features of this FET, such as its high current rating, low on-resistance, and low input capacitance, make it an ideal choice for these applications. Additionally, the voltage-controlled switching operation makes this FET highly efficient and reliable.
In conclusion, the NTB60N06L is an N-channel enhancement mode FET with a maximum drain-source voltage of 60V and a maximum drain current of 30A. It has a low on-resistance and range of input capacitance depending on the drain-source voltage. It is highly efficient and reliable and can be used in a wide variety of applications such as DC/DC converters, motor drivers, audio amplifiers, and battery management systems.
The specific data is subject to PDF, and the above content is for reference
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