NTB65N02RT4G

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NTB65N02RT4G is a silicon n-channel enhancement-mode MOSFET, manufactured by STMicroelectronics. It is most suitable for use in low-voltage, high-current applications such as automotive, industrial, and consumer equipment. This MOSFET is capable of switching loads up to 26 A and features excellent voltage-handling capabilities.

Applications

NTB65N02RT4G is ideal for high-power, high-current and low-voltage applications. Some of the uses of NTB65N02RT4G are as follows:

• Automotive: Engine control, power conditioning, ignition systems, automotive electronics, and more.
• Industrial: Industrial control, air conditioners, cooling systems, power supplies, motors.
• Consumer: Home appliances, audio systems, home theater, video game systems, and other consumer electronics.

Features

NTB65N02RT4G is designed with advanced technology to ensure superior performance and reliability. It has the following features:

• High current handling (up to 26A)
• Low-voltage operation
• Low gate charge
• Low on-resistance
• High transconductance
• High switching frequency
• RoHS compliant

Advantages

The key advantages of NTB65N02RT4G are its high current handling, low gate charge, low on-resistance, and high transconductance. This allows for high efficiency and higher performance in low voltage applications. Additionally, the MOSFET has low switching losses and a high switching frequency, which contribute to its power efficiency in highly power sensitive applications.

Working Principle

The working of NTB65N02RT4G relies upon the basic principles of field-effect transistors. The MOSFET consists of a source, a gate, and a drain. When a voltage is applied to the gate, it forms an electric field that modifies the conductivity of a conducting channel between the source and the drain. This process is called inversion and is used to effectively control current flow through the MOSFET. NTB65N02RT4G is an enhancement-mode device, which means that the MOSFET is normally non-conductive, and the current flow can only be initiated by applying a positive voltage to the gate.

Conclusion

NTB65N02RT4G is a high-performance low-voltage MOSFET, capable of handling heavy loads. Its advanced features, such as low gate charge, low on-resistance, and high transconductance, make it an ideal choice for power-sensitive applications. Its working is based on the principles of field-effect transistors and relies upon the inversion process to control current flow.

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