NTB65N02R

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The NTB 65N02R is a Nitride self-aligned FET, which is a type of FET and MOSFET transistor. It is specifically designed for use in power circuits such as power inverters, power amplifiers, and others. Unlike conventional FETs and MOSFETs, NTB 65N02R can handle higher voltage & currents and requires lower on resistance than other devices.

It is designed to allow for fast switch operations and high power efficiency, since it is a self-aligned structure that eliminates mechanical alignment. It also features low gate charge, low on-state resistance, and has fast switching times. Furthermore, it is highly robust and has a longer working life.

The NTB 65N02R is a single-channel device, which provides monolithic integration of three components--a Si MOSFET, a trench-gate DMOSFET, and an epitaxial Si vertical diode. This integration eliminates the need for any mechanical alignment as well as simplifies the design process and manufacturing. It also provides higher power efficiency than other FETs and MOSFETs.

The application field of NTB 65N02R is mainly in energy-efficient designs, such as automotive, industrial & consumer electronics, communication systems, renewable energy systems, and others. It is suitable for use in any system that requires improved efficiency, higher voltage handling, and higher frequencies. It is also suitable for applications where it is desirable to reduce the gate charge or enhance the power output.

The working principle of the NTB 65N02R is based on its self-aligned structure, which is designed to eliminate mechanical alignment. The work process is simple and efficient. When the gate voltage is applied to the gate of the device, it initiates the current flow from the source to the drain. The current is then transferred through the device and is regulated by the gate voltage.

In summary, the NTB 65N02R is a single-channel device that is designed for use in power circuits and applications requiring improved efficiency and lower on-resistance. It is a self-aligned structure that eliminates mechanical alignment, simplifies the design process, and provides higher power efficiency than other FETs and MOSFETs. It is suitable for use in any system that requires improved efficiency, higher voltage handling, and higher frequencies. The work process of the device is simple and efficient, using its self-aligned structure to regulate the current when the gate voltage is applied.

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