NTB60N06T4G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 150W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3220pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	81nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	14 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	60A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The NTB60N06T4G is a type of Field Effect Transistor (FET). It is a single-channel, self-aligned, dual-gate depletion-mode transistor. The device has a drain-source breakdown voltage of -60 V and a maximum drain current of -8 A. The device features low on-state resistance, low gate threshold voltage, and minimal capacitance.The NTB60N06T4G is a four-terminal device with three terminals designated as the gate, drain and source. The fourth terminal is a Field-Plate which is credited with reducing reverse-recovery loss. The gate and the source terminals are held at a common potential, while the drain and the source terminal are held at different voltages.Working PrincipleThis FET device operates on the principle of the field effect. This effect states that, when a voltage is applied to the gate terminal, a \'field\' is created that affects the conductivity of the channel between the drain and the source. This field, when properly adjusted, can either increase or decrease the current flow from the drain to the source, thus controlling the current through the device in a very efficient manner.The NTB60N06T4G utilizes a dual-gate design to effectively control the field effect. Both gates, when held at the same potential, interact with the channel, effectively control the current flow. When the two gates are held at different potentials, the field effect is more efficiently controlled as more variable control is possible on the current flow through the device.Application FieldThe NTB60N06T4G is mainly used in high current switching applications. It is commonly used in a variety of consumer electronic products, such as DVD and Blu-ray players and audio amplifiers, as well as other applications in the automotive and aerospace industries.The device is also widely used in the manufacturing of high-voltage and high-current switching circuits. It is ideal for use in applications with relatively long on/off times, such as in motor driver circuits and uninterruptible power supplies (UPS). Due to its depletion-mode operation, the device can be used in negative voltage applications, such as in the automotive and aerospace industries.Given its specifications, such as its relatively low on-state resistance and its low gate threshold voltage, the device is particularly suitable for applications that require fast switching capability, such as in power converters and high-frequency switching circuits.Overall, the NTB60N06T4G provides an ideal solution for a variety of switching applications that require fast switching capability and high current levels. Its low on-state resistance and low gate threshold voltage ensure that it can effectively handle even the most demanding of applications.

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