NTB60N06LT4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 150W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3075pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	16 mOhm @ 30A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	60A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<h2>Introduction</h2>The NTB60N06LT4G is a high-efficiency N-Channel MOSFET (metal–oxide–semiconductor field-effect transistor) designed for high frequency, high-speed switching applications. It is designed to reduce losses as well as provide reliable performance and interconnectivity. There are various types of MOSFETs and each has its own strengths and weaknesses. This article aims to describe the application field and working principle of NTB60N06LT4G MOSFETs.<h2>Application Field</h2>The NTB60N06LT4G is a high-speed, high-frequency, high-efficiency rated N-channel MOSFET. It is a general-purpose type MOSFET for many applications operating in several hundred kHz - 10 MHz. Its excellent frequency characteristics, high voltage breakdown and low RDS(on) make it an ideal choice for use in high frequency and high-speed circuits. Additionally, its low gate-source thresholds allow for higher switching speeds. Examples of applications for NTB60N06LT4G MOSFETs include:- Motor control: With suitable gate drive and switching speeds, NTB60N06LT4G MOSFETs can be used in motor control applications with very low losses.- DC-DC conversion: The NTB60N06LT4G MOSFETs are ideal for use in DC-DC converters and switching power supplies as they can handle large amounts of current with low gate charge.- Power amplifier: NTB60N06LT4G MOSFETs can be used as power amplifier output stages to provide high current gain with very low distortion.- Load switching: NTB60N06LT4G MOSFETs can be used in circuits to switch load currents in an efficient and reliable manner.<h2>Working Principle</h2>MOSFETs have three terminals – the gate, the source and the drain. The NTB60N06LT4G is an enhancement type MOSFET meaning it operates in the enhancement mode and does not have the depletion mode of conduction. To turn the MOSFET “on”, a positive potential must be applied to the gate terminal and this will create an electric field which induces holes in the N-type semiconductor material in which the MOSFET is fabricated. This, in turn, creates a conducting path between the source and the drain terminals in which electrons can be transferred. The greater the voltage applied to the gate terminal, the lower the resistance between the source and the drain.The normal mode of operation of a MOSFET is to have the drain-source voltage higher than the gate-source voltage and when the drain source voltage falls lower than the gate-source voltage, the MOSFET turns “off” and current cannot flow between the source and drain.The NTB60N06LT4G MOSFETs are designed to handle high frequencies and high voltages with low gate charge and low gate-source capacitances. These characteristics make the NTB60N06LT4G MOSFETs ideal for high-speed and high-frequency applications.<h2>Conclusion</h2>The NTB60N06LT4G is a high-efficiency N-channel MOSFET designed for high frequency, high-speed switching applications. It is suitable for many applications that require high frequencies and high voltage breakdowns along with low gate charge and low gate-source capacitances. Its excellent switching characteristics and low conduction losses make it an ideal choice for motor control, DC-DC conversion, power amplifier output stages and load switching applications.

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