NTB60N06LT4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTB60N06LT4 is a p-channel enhancement-mode field effect transistor (FET) with a low maximum on-state resistance (RDSon) of only 6 mΩ. With this device, a typical ON-state voltage drop from drain-to-source (VDS) of 1.6V provides a great power efficiency and with its low gate threshold voltage, users are ensured of an effortless and reliable performance.

The NTB60N06LT4 is manufactured by ON Semiconductor and is highly suitable for applications such as DC-DC converters, power supplies, motor control circuits, display board power supplies, and other synchronous rectification circuits. It is a single device with a T-shaped package and is available in a TO-220 package, with a maximum drain-source breakdown voltage of 60V and a drain-gate breakdown voltage of 40V. It has a maximum junction-temperature rating of 175°C which is suitable for a wide range of industrial applications.

Field Effect Transistors are made up of a three-dimensional semiconductor material and consist of two main parts; the Gate and the Source and Drain. FETs operate by use of a Voltage that is applied to the gate. This voltage can either fill in the valleys of a semiconductor material (for N-channel) or remove charge from the vales (for P-channel). This process is known as doping and is a very common concept in semiconductor devices. Once the charge carriers become confined, the Gate voltage will either increase or decrease the current flowing between the Source and Drain; referred to as the ‘ON State’.

The NTB60N06LT4 makes use of a p-channel enhancement-mode FET. Enhancement-mode transistors make use of a negative gate voltage to turn on the current between the source and drain. Depending on the bandgap of the semiconductor material used, the threshold voltage (VGS(th)) will be either positive or negative. The threshold voltage of the NTB60N06LT4 is -2V, meaning it requires a negative gate voltage to turn it on.

The drain-source current is essentially an avalanche phenomenon in which electrons avalanche into the channel, creating a conducting channel from gate to source. This current will increase linearly as VGS is increased, until it reaches a maximum value when VGS = VDS. This is called the saturation region and is the point of maximum efficiency in the device, where the smallest VDS creates the highest output current. This makes the NTB60N06LT4 a key component and making high efficiency applications.

The maximum ON-state RDSon of 6 mΩ and a maximum total gate charge of only 14.2 nC makes this device suitable for low voltage and low power applications, as the current flowing will be very low and the voltage drop across the device is minimal. The device can also handle high pulse currents and high peak voltages.

Overall, the NTB60N06LT4 is a great solution for any low voltage, high-efficiency application due to its low resistance and low maximum total gate charge. With its low gate threshold voltage and its high threshold current-carrying capability, this device will undoubtedly provide a maximally efficient and reliable performance in any application.

The specific data is subject to PDF, and the above content is for reference