NTB6413ANT4G Discrete Semiconductor Products

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The NTB6413ANT4G is a depletion mode power MOSFET designed to provide reliable and fast switching performance ideal for use in consumer and embedded applications. The power MOSFET is built using advanced trench MOS technology to deliver excellent transient response and is designed for load switching in applications where low on-resistance, fast switching speed and good thermal performance are called for. Its P-channel polarity is further enhanced using a Schottky diode at the source and drain, offering a low on-resistance and low capacitance value.

The NTB6413ANT4G is based on a vertical MOSFET with its channels oriented along the vertical plane of the die. This vertical plane offers excellent heat dissipation and high current density, enabling the design of power switches with excellent low on-resistance characteristics. Moreover, this high current density and fast switching speed allows the NTB6413ANT4G to achieve higher levels of power efficiency than traditional power MOSFET devices.

The NTB6413ANT4G is suitable for high-side applications in consumer, embedded, automotive and industrial applications. It has a low on-resistance of 4.14 ohms, as well as good thermal stability, making it an ideal choice for general-purpose load switching, as well as polar gear motors, electric vehicle charging stations and power supply systems. Furthermore, the NTB6413ANT4G is designed to meet a wide range of working temperatures, from -55°C to 125°C.

The mechanism of action of the NTB6413ANT4G is based on the flow of charge carriers within its channel. Its gate terminal serves as the control part of the device, with its potential serving as the basis of the current flowing through the channel. As the gate voltage is increased from zero volts (or the threshold voltage of the device), more charge carriers are induced in the channel thereby allowing a greater current flow across the channel.

Additionally, the structure of the NTB6413ANT4G is such that it is able to sustain a very large voltage differential between the source and drain. This helps to reduce the need for multiple MOSFETs in power switching applications, helping to reduce the overall circuit complexity. Moreover, the NTB6413ANT4G’s low input capacitance and extended drain-to-source breakdown voltage also enable it to be used in high-frequency switching applications.

In conclusion, the NTB6413ANT4G is a powerful and reliable depletion-mode power MOSFET designed for load-switching applications in consumer, embedded, automotive and industrial systems. With its low on-resistance and fast switching, it offers excellent performance when compared to other MOSFETs. Furthermore, its extended drain-to-source breakdown voltage, low input capacitance and good thermal stability make it an ideal choice for high-frequency switching, power supply systems and polar gear motors.

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