NTB65N02RT4 Discrete Semiconductor Products |
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| Allicdata Part #: | NTB65N02RT4OSTR-ND |
| Manufacturer Part#: |
NTB65N02RT4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 7.6A D2PAK |
| More Detail: | N-Channel 25V 65A (Tc) 1.04W (Ta), 62.5W (Tc) Surf... |
| DataSheet: | NTB65N02RT4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.04W (Ta), 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1330pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The NTB65N02RT4 is an N-channel MOSFET developed by ON Semiconductor. It is typically used in applications like switching, amplification and level shifting. In this article, we will take a closer look at the features, working principle and application field of the NTB65N02RT4.
Features
The NTB65N02RT4 is a vertical double-diffused MOSFET (VDMOS) which is designed as a toggle or p-channel enhancement mode MOSFET. It is available in the TO-220 package. It has a drain-source voltage (Vdss) of 65V, a drain current (Id) of 8A continuous, a drain-source on-resistance (Rdson) of 0.06 Ohm, an operating temperature of -55 to 150 degrees C and a thermal resistance rating of 175 degrees C/W. The gate-source voltage (Vgs) is 10V, while the gate-threshold voltage (Vth) is 2V.Working Principle
The working principle of the NTB65N02RT4 is based on the field effect transistor (FET) technology. FETs are voltage controlled devices, meaning the voltage applied to the gate determines the current flowing through the device. In this device, the gate and drain act as a control element and the source acts as a current input. As the voltage applied to the gate increases, the channel width between the drain and source increases. This results in a higher drain current and a decrease in on-resistance (Rdson).Application Field
The NTB65N02RT4 is mainly used in switching and level shifting applications. It can be used to switch high-voltage and high-current loads without having to use bulky switching devices such as relays. It can also be used for level shifting applications where the output voltage needs to be stepped up or down. It is also used for power switching applications such as DC-DC converters and power inverters.The NTB65N02RT4 MOSFET has a lot of advantages such as low on-resistance Rdson and good thermal performance. Its high drain current and low thermal resistance make it an ideal choice for power switching applications. In conclusion, the NTB65N02RT4 MOSFET is an excellent choice for switching, level shifting and power applications. Its high drain current, low Rdson and good thermal performance make it ideal for these applications.The specific data is subject to PDF, and the above content is for reference
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NTB65N02RT4 Datasheet/PDF