NTB6410ANG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	188W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	13 mOhm @ 76A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	76A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTB6410ANG is a single N-channel enhancement-type MOSFET, which can be used in a wide range of applications. The device has a high voltage, low on-resistance, and low gate charge, and can be used in many analog and digital circuits.The basic principle of operation of the NTB6410ANG is the same as other enhancement-type MOSFETs. This type of device has an insulated-gate field-effect transistor (IGFET), which is controlled by a voltage applied to the gate. When the voltage is applied, the channel between the source and drain opens up and current is allowed to flow through it. The amount of current that is allowed to pass through depends on the gate voltage, and so by controlling the gate voltage the amount of current that is allowed to pass through the channel can be changed.The NTB6410ANG is usually used in applications where a fast switching time is required or a high current needs to be passed through the channel. It can also be used in low voltage applications, such as battery-powered systems.The NTB6410ANG is most commonly used in applications such as gate drives, inverters, and high-speed MOS logic circuits. It is also commonly used as an input device for power switching applications, such as DC-to-DC converters.One of the major benefits of the NTB6410ANG is its low gate charge. This allows for faster switching times than other MOSFETs, as the capacitance of the gate does not need to charge up each time the transistor is switched on.In terms of power dissipation, the NTB6410ANG has a low on-state voltage loss. This is due to its high voltage rating, which means that the device can be used at higher voltages without excessive power loss.In summary, the NTB6410ANG is a single N-channel enhancement-type MOSFET which can be used in a variety of applications. It has a high voltage rating, low on-resistance, and low gate charge, allowing for faster switching times. It is commonly used for gate drive, inverter, and high-speed MOS logic applications, as well as for input devices in DC-to-DC converters. The device has a low power dissipation, making it suitable for battery-powered systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description