NTB6412ANT4G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTB6412ANT4G is a single N-channel depletion mode power field effect transistor (FET) used for applications such as AC switching, dc-to-dc conversion, motor control and other power applications. It is designed for a wide range of operating frequencies (up to 4GHz) to provide low on resistance and low gate charge characteristics. The NTB6412ANT4G is manufactured using a high performance N well process, which provides a higher degree of electrical control, as well as a durable, high volume production capability.

When used as a traditional FET, the NTB6412ANT4G uses the MOSFET (metal-oxide-semiconductor field effect transistor) structure to provide excellent signal reproducibility and fast switching speed. Its drain-to-source on-resistance (RDS) is typically 11mΩ at 10V supply, and its on-resistance is temperature-independent, making it an ideal choice for low-power applications. Its gate-source threshold voltage (Vth) is typically -2.5V, which also helps keep the design of the circuit simple and efficient.

The NTB6412ANT4G operates in the depletion mode, meaning that it is designed to hold the drain-source channel "on" when the gate is not pulled up to the source potential. The majority of the drain current is controlled by the gate voltage, with a low gate voltage switching the majority of the current off. This makes it an ideal choice for applications requiring low current drive. It can also be used in the enhancement mode for higher current applications, making it a flexible choice for a variety of power requirements.

The NTB6412ANT4G is also designed with a unique feature that allows it to be used in high-frequency applications up to 4GHz. The device comes with a special P-channel FET which enables the device to switch faster than regular N-channel FETs, and provides very low gate charge (Qg) of only 3.2nC at 10V supply. This makes it an ideal choice for high-speed designs, ensuring excellent signal fidelity, fast switching times and low power consumption.

The NTB6412ANT4G is designed for use in a wide range of applications, including AC switching, dc-to-dc conversion, motor control, power modulator and other power applications. It is also suitable for use in medical implants, communication equipment, aerospace electronics and other high reliability applications. It is designed for use in both elevated and atmospheric temperatures up to 150°C, providing the flexibility to meet a wide range of environmental requirements.

In conclusion, the NTB6412ANT4G is an excellent choice for designers looking to optimize their designs for applications requiring low power, high performance and high reliability. It is a cost-effective single N-channel depletion mode power FET that can be used in a wide range of applications, and provides excellent signal reproducibility, fast switching speed and low power consumption. It is designed for use in both elevated and atmospheric temperatures up to 150°C, making it a reliable and durable solution for the most demanding applications.

The specific data is subject to PDF, and the above content is for reference