NTB6410ANT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTB6410ANT4GOSTR-ND |
Manufacturer Part#: |
NTB6410ANT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 76A D2PAK |
More Detail: | N-Channel 100V 76A (Tc) 188W (Tc) Surface Mount D2... |
DataSheet: | NTB6410ANT4G Datasheet/PDF |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 188W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 76A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTB6410ANT4G is a 60V, N-channel logic level power MOSFET which can operate with a wide VDD range of 3V – 20V. The NTB6410ANT4G by Nexperia provides unbeatable performance, low on-resistance, fast switching and an optimization for specific application. It is a low Qg and low RDS(on) performance power MOSFET available in an industry standard DFN 4090-3 package. The DFN 4090-3 package is a low profile package with a 3.3mm x 3.3mm body. The NTB6410ANT4G is optimized for use in high temperature, high speed, and low voltage switchmode power conversion applications including POL converters, wireless power amplifiers, point-of-load converters, and motor control or lighting applications.
The NTB6410ANT4G is designed for mobility and energy efficiency, reducing energy consumption in mobile and industrial systems. It is designed to withstand the performance and reliability requirements specific to these applications. The NTB6410ANT4G is suitable for PWM frequency up to 5MHz, allowing for fast switching and what is ensured by the low gate capacitance. With an on-resistance of 128mΩ or less, switching loss of the NTB6410ANT4G is minimized. The device also has an improved temperature performance for high frequency operation. The optimized package design reduces the inductance and therefore the cross-conduction. The device features amazing power ratings in the DFN 4090-3 package, including a 375mJ total power rating.
The NTB6410ANT4G is a 60V MOSFET with a logic level gate edge trigger. This level can handle voltage of 6V, regardless of temperature, as specified by its logic level rating. The NTB6410ANT4G is pin compatible with the parallel NFET devices. Its performance is superior to that of the NFET but the same low voltage gate drive is maintained. This flexibility allows for simpler designs that use the same gate drive, but with improved performance and reliability.
This power MOSFET is designed for use in switching applications such as POL, motor control and general power applications. It exhibits excellent low on-resistance and fast switching characteristics that make it suitable for a wide range of applications. The device also exhibits excellent performance in pulsed conditions, and can handle voltage spikes of up to 60V. The off state of this MOSFET can handle voltage of up to 60V.
The NTB6410ANT4G is an ideal choice for applications that require fast switching and high power capabilities. The device has an on-resistance of 128mΩ or less and an optimized package design reduces the inductance, which minimizes switching and conduction loss. With a logic level gate edge trigger and voltage up to 6V, the NTB6410ANT4G is suitable for use with all logic level gate drive MOSFETs. In addition, the device features a temperature performance optimized for use in high frequency applications. Its excellent power handling capabilities and high temperature performance ensure it is suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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