Allicdata Part #: | NTB6413ANG-ND |
Manufacturer Part#: |
NTB6413ANG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 42A D2PAK |
More Detail: | N-Channel 100V 42A (Tc) 136W (Tc) Surface Mount D2... |
DataSheet: | NTB6413ANG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTB6413ANG is a single n-channel, enhancement mode field effect power transistor. It is designed and manufactured specifically for use in automotive and similar applications. This device is capable of handling peak current of up to 2.45A, and a drain-source voltage of up to 23V. The NTB6413ANG can be used for a variety of applications in automotive, industrial, white goods and consumer applications.
The NTB6413ANG is a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET transistor is a field effect transistor that uses metal-oxide for its gate insulator instead of traditional silicon dioxide. The metal-oxide layer is much thinner than silicon dioxide, which results in a smaller gate capacitance and makes the MOSFET much more suitable for high frequency and high frequency/high current applications.
The NTB6413ANG is an n-channel MOSFET. This type of MOSFET is used when the application requires the transistor to be turned on and off by a controlling voltage applied to the gate. The n-channel MOSFET has an additional input - the source - which can be used to further control the functioning of the transistor. The source of the NTB6413ANG can be used to create an adjustable voltage threshold for the transistor.
The primary application of the NTB6413ANG is automotive systems. This is due to its high current handling capability and low on-resistance. The NTB6413ANG can be used in automotive systems such as powertrain control modules, instrumentation, and engine control systems. It can also be used in audio equipment, HVAC systems, and power supplies.
The working principle behind the NTB6413ANG is based on the principle of using an electric field to control the conductivity of a semiconductor material. The device has two terminals, the source and the drain, which act as the control terminals for the transistor. The source is connected to a voltage source, which produces an electric field, which in turn controls the conductivity of the transistor. The gate of the device is connected to a controlling voltage, which can be used to control the on/off state of the device. When the gate voltage increases, the transistor will turn on and allow current to flow through it. When the gate voltage is decreased, the transistor will turn off, blocking the current flow.
The NTB6413ANG is a single n-channel, enhancement mode field effect power transistor. It is designed and manufactured specifically for use in automotive and similar applications. This device is capable of handling peak current of up to 2.45A, and a drain-source voltage of up to 23V. The NTB6413ANG can be used for a variety of applications in automotive, industrial, white goods and consumer applications.
The NTB6413ANG is a versatile MOSFET transistor that can be used in many applications, as it provides a high current handling capability, low on-resistance, and adjustable voltage thresholds. Its primary use is in automotive systems, but it can also be used in HVAC systems, audio equipment, and power supplies. Its working principle is based on the principle of using an electric field to control the conductivity of a semiconductor material.
The specific data is subject to PDF, and the above content is for reference
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