NTB6411ANT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTB6411ANT4GOSTR-ND |
Manufacturer Part#: |
NTB6411ANT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 72A D2PAK |
More Detail: | N-Channel 100V 77A (Tc) 217W (Tc) Surface Mount D2... |
DataSheet: | NTB6411ANT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 217W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 72A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 77A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTB6411ANT4G is an N-Channel Enhancement Mode MOSFET designed primarily for switching applications. It is an enhanced version of the original NTB6411AN which offers higher dV/dt, lower gate input resistance, as well as improved tolerance to turn-on delays. The device is organized in a single component, has a source lead connected to ground, a gate lead connected to the controller, and a drain lead connected to the load. The NTB6411ANT4G has a high frequency of operation, making it suitable for high speed time-critical applications.
When the gate voltage is below the threshold voltage, the transistor is in cutoff mode, meaning that no current flows between the source and drain. When the gate voltage is above the threshold voltage, the transistor is in saturation mode and can conduct current from the source to the drain. The reverse current capability of the transistor limits the amount of current which can be conducted from drain to source. The maximum drain-source current (ID) is specified in the datasheet for each particular device.
The NTB6411ANT4G can be used in a variety of applications, such as amplifier circuits, motor control, PWM control, switching power supplies, and load switching. Its compact size and low power consumption make it suitable for applications that are both space and power constrained. The device also has a high operating temperature range, making it suitable for applications with high ambient temperatures.
Due to its high switching speed and low threshold voltage, the NTB6411ANT4G is capable of effectively controlling the operation of power supplies using pulse-width modulation techniques. The device can be used to regulate the voltage output of an AC to DC converter or switching power supply, as well as to control the speed of DC motors using PWM. The NTB6411ANT4G is also suitable for noise sensitive applications because it produces minimal output noise.
The N-Channel enhancement-mode MOSFET offers superior performance and a variety of features which make it a very useful device for a wide range of applications. Its wide drain-source voltage range and low threshold voltage make it suitable for a variety of power switching applications. The device also has a high operating temperature range which makes it suitable for applications with high ambient temperatures. With its compact size and low power consumption, the NTB6411ANT4G is an ideal choice for space- and power-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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