NTGS1135PT1G

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The NTGS1135PT1G is a P-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for ultra-low voltage operation. It is optimized for low on-state resistance, low gate charge and low output capacitance. Its low gate threshold voltage enables it to be used in low voltage applications such as low dropout (LDO) linear regulators. It is designed to be used in space-saving miniature SOT-363 packages, providing a low-cost, low-voltage solution for a variety of automotive, portable, and communication applications.

Application Field

The NTGS1135PT1G is ideal for low dropout (LDO) linear regulators for portable, battery powered, and automotive applications. It is also well suited for use in power management applications such as DC/DC controllers and synchronous rectifiers. Other applications include overvoltage protection circuits, service life enhancement circuits and level shifter applications.

Working Principle

The NTGS1135PT1G operates on a principle called “Saturation.” This means that when a voltage is applied to the gate terminal, a voltage drop will occur across the semiconductor, causing it to enter a “saturated” state. In the saturated state, the drain to source current is controlled by the gate voltage, meaning that the NTGS1135PT1G can be used as a voltage controlled switch when used in linear applications. It is important to note that when the gate voltage reaches a certain threshold, the MOSFET will enter a “Linear” region. This means that the current can be controlled by applying different gate voltages, making the NTGS1135PT1G very versatile for use in a wide range of applications.

The NTGS1135PT1G has a low on-resistance (RDS) of 11.5mΩ. This means that it has a very low resistance between the drain and source, meaning that it can be used to control higher currents than similar MOSFETs. The MOSFET’s low gate charge also helps to reduce power consumption compared to conventional MOSFETs, making it especially attractive for low power applications. The MOSFET’s low output capacitance also helps improve its switching performance.

The NTGS1135PT1G is designed to be used in space-saving SOT-363 packages. The packages are small enough to make the MOSFETs suitable for use in a variety of mobile applications, including portable and battery powered ones. The MOSFETs can also be used in a wide variety of automotive, communications, and commercial applications.

In conclusion, the NTGS1135PT1G is a P-channel enhancement-mode MOSFET designed for low voltage operation. It has a low on-state resistance, low gate charge, and low output capacitance, making it well-suited for low power and low voltage applications such as LDO linear regulators, DC/DC controllers, synchronous rectifier, overvoltage protection, and level shifter circuits. It is also designed to be used in space-saving SOT-363 packages for portable and automotive applications.

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