NTGS5120PT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTGS5120PT1GOSTR-ND |
Manufacturer Part#: |
NTGS5120PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 1.8A 6-TSOP |
More Detail: | P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | NTGS5120PT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 942pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 111 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTGS5120PT1G is an N-channel complementary metal–oxide–semiconductor (CMOS) field-effect transistor (FET). This transistor offers a switching speed at the maximum voltage with low input capacitance, making it useful for power management applications. The NTGS5120PT1G can be used to switch heavy loads with a low amount of power, as well as switch high power signals such as data signals. This transistor also provides a high current gain and low reverse transfer capacitance, which helps reduce power consumption.
The NTGS5120PT1G is an ideal choice for applications that require high switching speed and low power consumption. The device features an on resistance of 28 ohms and a maximum voltage rating of 20V. The switch has an on-state resistance of 28 ohms, an off-state resistance of 0.2 ohms, and a threshold voltage of 1V. It has a maximum operating temperature of 125°C and a storage temperature of -55°C to 150°C. It also has a breakdown voltage of 20V. The transistor is packaged in a TSSOP-8 package.
The NTGS5120PT1G is a Metal Oxide Semiconductor Field Effect Transistor, or MOSFET. This type of device is used to control the flow of currents using an electrically-controlled field. It is a voltage-controlled device that provides high- switching speeds, low input capacitance, and low power consumption. The operating principles behind MOSFETs are based on the idea of an electrical field’s ability to control current flow.
The NTGS5120PT1G is used in a wide variety of industrial, commercial and consumer applications. It can be used as a switch for lighting, heating, and cooling systems, for motor control such as for electric gates and garage door openers, and in signal conditioning for computer networks and telephone lines.
The NTGS5120PT1G is a low power, low voltage, single-channel MOSFET with a turn-on threshold voltage of 1V. It is composed of two components, a MOSFET and a diode. The diode is used to protect the gate of the MOSFET from overvoltage and transient currents. When a voltage is applied to the gate, the diode clamps the voltage to the threshold voltage, allowing the current to flow between the source and drain. The drain current is proportional to the applied voltage at the gate, allowing the user to control the current flow.
The wide range of applications, coupled with its low voltage and low power requirements, make the NTGS5120PT1G is an attractive choice for a variety of industrial, commercial and consumer projects. Its easy-to-use design and low-cost make it a great option for those looking for a simple and effective solution for their applications.
The specific data is subject to PDF, and the above content is for reference
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