NTGS3446T1G

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NTGS3446T1G is a N-channel enhancement mode Power MOSFET, based on advanced trench technology.

The device is designed and manufactured using STMicroelectronics’ proprietary Trench MOSFET technology which features a vertical structure, providing a low on-state resistance, low gate charge and exceptional Avalanche energy rating while maintaining tight parameter distribution.

The device features a low gate to drain capacitance and low gate input resistance to reduce switching losses. It is suitable for use in switching power supplies, DC/DC converters, motor drives, and general DC/AC inverter applications.

NTGS3446T1G application field covers a wide range including:

• Power converter
• LED Lighting
• Portable instruments
• Telecommunication Systems
• DC motor control
• Battery powered vehicles

As for NTGS3446T1G working principle, this power MOSFET uses the fact that the “on” resistance of a MOSFET is determined by the voltage applied between the gate and source. When the junction of the drain and the source is biased with a reverse bias, the channel is pinched off, thereby preventing current flow. When the gate to source voltage is increased, the reverse biased channel will be opened which allows current to circulate through the channel.

When the reverse biased junction is pinch off, small amounts of inversion carriers are found in the channel. This inversion carrier increases with the gate to source voltage and will eventually conduct from source to drain voltage with certain threshold voltage. The carrier density increases exponentially with the increase of gate to source voltage, therefore, a large increase in the drain to source voltage occurs at the threshold voltage region.

When the junction is saturated, the carrier density is high and the channel between the drain and the source becomes very narrow. As the channel became narrow, the drain to source voltage will remain constant. In other words, the drain current is determined by the gate voltage coupled with the drain to source voltage.

The threshold voltage of NTGS3446T1G is 2.6V, with very low R_DS(on) of 0.086 Ohm which makes it suitable for high frequency switching applications. It provides very low capacitance between gate and drain which reduces losses in circuit and ensures fast switching. It can handle drain-source voltage up to 30V and maximum drain current of 31A, making it a suitable selection for a wide range of applications.

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