NTGS3130NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTGS3130NT1GOSTR-ND |
Manufacturer Part#: |
NTGS3130NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 4.2A 6-TSOP |
More Detail: | N-Channel 20V 4.2A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | NTGS3130NT1G Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 935pF @ 16V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 20.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 5.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTGS3130NT1G is a N-Channel 30V MOSFET from Texas Instruments in SOP-6 package. It is a general-purpose low gate charge MOSFET device designed to minimize technological risk and provide cost and performance advantages. NTGS3130NT1G is adaptable to various applications due to its low gate resistance and low gate capacitance.
The MOSFET is an electrically operated switch, capable of carrying high currents both in conducting and blocking states. As it switches rapidly, it gives rise to various applications. It can be used in various operations such as in power management, motor control & drives, power line protection, and so on.
NTGS3130NT1G is a low RDS(ON) MOSFET with a 30V maximum drain-source voltage, typically 0.33Ω drain-source on resistance, and a maximum drain current of 6A. It is also equipped with an exposed drain which provides enhanced drain to source feedback and better performance at higher temperatures. This MOSFET can handle up to 0.02A Gate charge and has a drain-source breakdown voltage of 60V. It is also capable of withstanding up to +175°C Junction temperature.
The working principle of NTGS3130NT1G is fairly simple. This MOSFET works on the phenomenon of minority charge carriers, which are the electrons and holes in the component. When a voltage is applied to the gate, it allows the electrons to move from the source to the drain. This is then known as the ‘on’ state of the component. When there is no gate voltage applied, the component remains in its ‘off’ state.
This MOSFET is used in a range of applications such as power line protection, power switching and in many other operations which require high-current handling capacity. It is suitable for these applications because of its low on-resistance, low gate charge and low switching time. Its low on-resistance ensures lower power losses, which makes it more efficient and cost-effective in terms applications requiring power line protection. Moreover, its low gate charge also improves performance in switching applications.
In addition, NTGS3130NT1G is suitable for a range of other operations as well, such as motor control & drives and various other power management operations. It is used in motor control & drives because of its low switching time and its ability to handle high currents at low power losses. It is also useful in power management operations because of its low gate charge and its ability to handle high currents.
All in all, NTGS3130NT1G is an excellent option for applications where high-current handling is required. It is suitable for power line protection, power switching, motor control & drives, and other power management operations due to its low on-resistance, low gate charge and fast switching time.
The specific data is subject to PDF, and the above content is for reference
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