NTGS4111PT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTGS4111PT1G is a powerful, low voltage MOSFET suitable for many applications in power management. It is a single N-channel MOSFET that is suitable for use as a replacement for a P-channel MOSFET in a power management system. The device is designed to maintain a low threshold voltage and provides excellent switching performance under normal operating conditions.

The PT1G has an internal gate to source resistance (RGS) of less than 20 Ohms, allowing it to provide a high electrical field strength. The device also has a very low on-state drain-source resistance (RDSON) and a low gate-source threshold voltage (VTH) of less than 2V. This allows the device to operate at low voltages and handle higher gate capacitance than other MOSFETs in similar packages.

When it comes to the application fields for the NTGS4111PT1G, it can be used in switching and linear power regulation applications in consumer, communication, industrial and computer systems. It can also be used in the high side and low side of the switching power supply. It is suitable for applications such as power management, voltage regulation, current supervision, and logic level control.

As for the working principle of the NTGS4111PT1G, it is based on the MOSFET depletion mode, which produces an output by varying the gate voltage. When there is no gate voltage, the device acts like a resistor, allowing current to flow from drain to source. When the gate voltage is increased, the electric field within the black silicon of the device strengthens and begins to restrict the current flowing through the drain-source path by depleting charge carriers. This depletion of charge carriers modulates the current through the drain-source path, allowing it to be regulated by the gate voltage.

The device can be used in linear voltage regulation applications to provide an adjustable output voltage. In this type of application, the device is used as a variable resistor where a current is applied to its drain and the voltage across the drain and source of the device is adjusted by varying the gate voltage. This allows the output voltage to be precisely regulated, maintaining a steady current output. The device can also be used for logic level control by either tightening or loosening its gate voltage. This can be used to regulate the current flowing through the device, allowing it to be used for digital logic control.

In conclusion, the NTGS4111PT1G is a powerful, low voltage MOSFET that can be used for a variety of power management tasks. Its low threshold voltage and high RGS allow it to handle higher gate capacitance than other MOSFETs in similar packages. Its applications range from switching and linear power regulation to digital logic level control. By understanding its working principle, the device can be used to achieve powerful and precise power management in a variety of applications.

The specific data is subject to PDF, and the above content is for reference