NTGS3136PT1G Discrete Semiconductor Products

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The NTGS3136PT1G is a high performance power metal oxide semiconductor field-effect transistor (MOSFET) optimized for power management applications. It is an enhancement mode N-Channel power switch commonly used as a switching element in DC-to-DC converters, power inverters, motor driving circuits, and DC motor applications. It has very low RDS(on) resistance and low gate charge values, making the NTGS3136PT1G an ideal choice for low power applications, such as portable computers and battery operated equipment.

MOSFETs are essentially insulated gate field effect transistors that are used as switches or amplifiers. A MOSFET usually consists of a source, a drain, and a channel between them. The conductivity of the MOSFET is controlled by varying the voltage of the gate relative to the source. When the voltage applied to the gate is turned off, the current between the source and drain is cut off, creating an insulated non-conductive channel. When the voltage applied to the gate is turned on, current can flow.

The NTGS3136PT1G is a logic level MOSFET. Its gate threshold voltage is low enough to be driven directly by low power logic signals. This makes it ideal for portable solutions where there is a need for low power switched devices. It also has an internal ESD protection diode for reverse voltage protection on supply or gate lines.

The NTGS3136PT1G is especially well suited for power MOSFET applications. It has a drain-source breakdown voltage of 30V, and it can handle up to 30A of continuous (pulsed) drain current. Its RDS(on) resistance is only 0.0011Ω, making it suitable for even very low power applications. The gate charge is also very low, only 0.8nC typical. This low charge makes it more suitable for fast switching applications.

In addition to its low RDS(on) and gate charge values, the NTGS3136PT1G is also able to handle up to 175°C junction temperature. This is higher than the typical 125°C junction temperature rating of most MOSFETs, making it more suitable for high temperature applications. It also has a high peak pulse current rating of up to 7.5A, making it suitable for applications where high transient current is expected.

The NTGS3136PT1G is available in the Surface Mount Technology (SMT) package and is rated for operation from 0°C to 70°C. It is also RoHS and REACH compliant, making it suitable for applications which require compliance with the EU directives on hazardous substances.

Overall, the NTGS3136PT1G is an ideal choice for power management, DC-to-DC converters, power inverters, motor driving circuits, and DC motor applications. It is a highly efficient MOSFET, capable of supporting up to 30A of continuous (pulsed) drain current. Its low RDS(on), high junction temperature rating and peak pulse current rating make it very suitable for a wide range of applications. Its high efficiency and low cost makes the NTGS3136PT1G an ideal choice for power management applications.

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