NTGS3443BT1G Allicdata Electronics
Allicdata Part #:

NTGS3443BT1G-ND

Manufacturer Part#:

NTGS3443BT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 2.7A 6-TSOP
More Detail: P-Channel 20V 2.7A (Ta) 700mW (Ta) Surface Mount 6...
DataSheet: NTGS3443BT1G datasheetNTGS3443BT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 819pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTGS3443BT1G application field and working principle

The NTGS3443BT1G is an N-channel power Field Effect Transistor (FET). It is typically used as a wide range of applications, including desktop computers, TV sets, DVD players, data systems and more. The NTGS3443BT1G is made of Silicon, making it a highly reliable device and allowing it to perform in a variety of conditions. This FET can also be used in high power amplification circuits, motor control and switch circuits.

The NTGS3443BT1G is a single N-Channel FET, meaning it has one terminal that is used as the source and another terminal which is used as the drain. In addition, there is an insulation layer between the source and the drain, which prevents current from passing through the FET. A third terminal, known as the gate terminal, is used to control the current that travels between the source and the drain.

The main purpose of the NTGS3443BT1G is to control the flow of current between the source and the drain. This FET can be used in switching and amplification circuits, as it is capable of withstanding a wide range of currents and voltages. Additionally, this FET has a low on-state resistance, meaning that it can switch quickly between on and off states. This makes it ideal for high speed switching application such as for motor control.

The NTGS3443BT1G also has excellent noise immunity and a low gate charge, meaning that it can withstand a wide range of noise levels and switch quickly. Additionally, the gate to source junction has a low reverse transfer, making it suitable for low input gate drive applications.

Overall, the NTGS3443BT1G is an excellent choice for a wide range of applications, including motor control and high power amplification. It is a reliable device, with excellent noise immunity and low on-state resistance, making it ideal for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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