NTGS3455T1G Allicdata Electronics

NTGS3455T1G Discrete Semiconductor Products

Allicdata Part #:

NTGS3455T1GOSTR-ND

Manufacturer Part#:

NTGS3455T1G

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 2.5A 6-TSOP
More Detail: P-Channel 30V 2.5A (Ta) 500mW (Ta) Surface Mount 6...
DataSheet: NTGS3455T1G datasheetNTGS3455T1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10769
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTGS3455T1G is a N-channel FET manufactured by Eastern Electronics. It belongs to the family of single field effect transistor (FET) devices commonly referred to as a MOSFET (metal oxide semiconductor FET). It is suitable for power switching and high-speed switching applications. The device has a drain voltage rating of +/-20 V, and a total gate charge of 6 nC (nanocoulombs). The maximum continuous drain current that it can handle is 30A.

This FET has a wide range of uses and is suitable for a variety of applications. One of the most common applications of the NTGS3455T1G is for switching and power driver applications. It has a large on-resistance rating, which allows it to control high-power loads, and an integrated gate to drive the FET in and out of conduction. It can be used in major motor control systems, automotive power modules and motion control apps, as well as in single-phase and three-phase DC power converters. Other applications include DC-to-DC converters and boost converters, uninterruptible power supplies, and power management.

The working principle behind the NTGS3455T1G is similar to that of a regular FET. It has a gate, a drain and a source, and is based on the principle of field effect. When voltage is applied to the gate and drain, an electrostatic field is generated between them, which in turn controls the flow of current between the source and the drain. The voltage applied to the gate determines the amount of current that can flow from the source to the drain; higher voltages result in higher currents, and lower voltages result in lower currents. In this way, the FET acts as a switch, opening and closing depending on the gate voltage.

The NTGS3455T1G is a high-speed switching device, capable of switching times as low as 15ns. It also has a low on-resistance (RDS-on) of 0.105 Ohm, which makes it suitable for a wide range of power conversion applications. The device can also handle more than 30A of continuous current, making it well suited for high-power applications. Finally, it has an integrated gate which eliminates the need for an external driver circuit.

In conclusion, the NTGS3455T1G is a single FET suitable for switching and power control applications. It has a wide range of uses and can handle currents of up to 30A. In addition, its high-speed switching time and low on-resistance make it suitable for a variety of power conversion applications. Finally, it has an integrated gate, eliminating the need for an external driver circuit.

The specific data is subject to PDF, and the above content is for reference

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