NTGS3455T1G Discrete Semiconductor Products |
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Allicdata Part #: | NTGS3455T1GOSTR-ND |
Manufacturer Part#: |
NTGS3455T1G |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 2.5A 6-TSOP |
More Detail: | P-Channel 30V 2.5A (Ta) 500mW (Ta) Surface Mount 6... |
DataSheet: | NTGS3455T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10769 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTGS3455T1G is a N-channel FET manufactured by Eastern Electronics. It belongs to the family of single field effect transistor (FET) devices commonly referred to as a MOSFET (metal oxide semiconductor FET). It is suitable for power switching and high-speed switching applications. The device has a drain voltage rating of +/-20 V, and a total gate charge of 6 nC (nanocoulombs). The maximum continuous drain current that it can handle is 30A.
This FET has a wide range of uses and is suitable for a variety of applications. One of the most common applications of the NTGS3455T1G is for switching and power driver applications. It has a large on-resistance rating, which allows it to control high-power loads, and an integrated gate to drive the FET in and out of conduction. It can be used in major motor control systems, automotive power modules and motion control apps, as well as in single-phase and three-phase DC power converters. Other applications include DC-to-DC converters and boost converters, uninterruptible power supplies, and power management.
The working principle behind the NTGS3455T1G is similar to that of a regular FET. It has a gate, a drain and a source, and is based on the principle of field effect. When voltage is applied to the gate and drain, an electrostatic field is generated between them, which in turn controls the flow of current between the source and the drain. The voltage applied to the gate determines the amount of current that can flow from the source to the drain; higher voltages result in higher currents, and lower voltages result in lower currents. In this way, the FET acts as a switch, opening and closing depending on the gate voltage.
The NTGS3455T1G is a high-speed switching device, capable of switching times as low as 15ns. It also has a low on-resistance (RDS-on) of 0.105 Ohm, which makes it suitable for a wide range of power conversion applications. The device can also handle more than 30A of continuous current, making it well suited for high-power applications. Finally, it has an integrated gate which eliminates the need for an external driver circuit.
In conclusion, the NTGS3455T1G is a single FET suitable for switching and power control applications. It has a wide range of uses and can handle currents of up to 30A. In addition, its high-speed switching time and low on-resistance make it suitable for a variety of power conversion applications. Finally, it has an integrated gate, eliminating the need for an external driver circuit.
The specific data is subject to PDF, and the above content is for reference
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