NTGS3441T1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTGS3441T1 is a single gate N-channel MOSFET and is a type of FET device. MOSFETs, short for Metal Oxide Field Effect Transistor, are used in a wide variety of electronic circuits, from low-power to high-power switching applications, and provide efficient and reliable performance. The NTGS3441T1 offers excellent performance in a variety of applications, and as such is suitable for powering various electronic devices.

In general, the working principle of MOSFETs is to control current flow through a semiconductor element. This is achieved by using an oxide layer to control the movement of electrons through the gate terminal. The gate terminal is then used to “turn on” or “turn off” the current flow from the source to the drain. This process is referred to as “gating” and is the main feature of MOSFETs that make them so useful in power switching applications.

The NTGS3441T1 is designed for low-voltage, high-efficiency, and easy-to-use power switch applications. The device features an ultra-low on-resistance of 0.35 ohm and an off-state breakdown voltage of 750V, making it ideal for use in a variety of power-switching circuits. The device also has an excellent temperature coefficient of -70mV/°C, which ensures consistent and accurate operation over a wide range of operating temperatures. Additionally, the NTGS3441T1 features a low input capacitance of 20pF and a fast switching speed of 3µs.

The NTGS3441T1 is suitable for a variety of applications, such as DC-DC converters, power management circuitry, class-D audio amplifiers, motor control systems, and power monitoring circuits. The device is also often used in high-current circuits such as motor control applications, where it can be used to efficiently switch high loads with minimal power loss. Additionally, the device can be used in high-frequency applications such as the switching of high-frequency pulses in RF communication systems.

Overall, the NTGS3441T1 is an excellent device for many projects due to its excellent characteristics. It is suitable for both low-power and high-power switching applications, and provides consistent performance over a wide range of operating temperatures. Additionally, the device features an ultra-low on-resistance of 0.35 ohm and an off-state breakdown voltage of 750V, making it ideal for use in a variety of power-switching circuits.

The specific data is subject to PDF, and the above content is for reference