NTGS3441BT1G Allicdata Electronics
Allicdata Part #:

NTGS3441BT1G-ND

Manufacturer Part#:

NTGS3441BT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 2.2A 6-TSOP
More Detail: P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount 6...
DataSheet: NTGS3441BT1G datasheetNTGS3441BT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTGS3441BT1G is a P-channel enhancement-mode MOSFET that joins the STFET family in providing advanced level design solutions for low voltage load switch steering control. The device is suitable for low voltage load switching applications such as microcontrollers, digital signal processors and other logic controls, where space and power consumption are particularly important. The device has a low input capacitance making it ideal for high speed switching applications. The family satisfies the demanding requirements of the most advanced system solutions.

The NTGS3441BT1G works by allowing a P-channel, hence enabling the user to switch electrical devices on and off without having to break the circuit. In a common N-channel MOSFET, the gate voltage needs to be negative to turn the device on (ON state). However, with a P-channel device, the gate voltage needs to be positive in order to turn the device on (ON state).

This makes the device ideal for applications in which voltage can be continuously applied and then switched off by means of a P-channel MOSFET. This kind of applications includes LED drivers, automotive power, motor control, sensor interfacing and audio switching. Thanks to its low input capacitance, the NTGS3441BT1G is ideal for high speed switching applications, such as in power systems, communications, consumer electronics and medical products.

As a single MOSFET of its type, the NTGS3441BT1G has a variety of features that make it suitable for various applications. It has a maximum drain-source breakdown voltage of 25V, a Gate Threshold Voltage of 1.4V, a Drain-source On Resistance of only 0.035Ohms at a Gate Voltage of 5V, and a drain current capability (Continuous) of up to 1A. It also provides excellent thermal stability, extremely low gate charge and fast switching speeds.

In addition, the device is designed to be compatible with the European community’s RoHS (Restriction of Hazardous Substances) policy, eliminates the need for an external gate resistor, and the relatively small package size fits a variety of applications.

Overall, the NTGS3441BT1G is a perfect fit for applications requiring fast switching and low voltage control. Its main application fields are LED drivers, automotive, motor control, sensor interfacing, audio and power management, communications, consumer electronics and medical. Thanks to its low capacitance, it can also be used in high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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