NTGS3441T1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTGS3441T1G is a family of dual N-channel MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) with a 30V drain-source Voltage and a hyperfast unipolar switch. It is designed to be used as a main switch in automotive and industrial applications. It can be used in places with general purpose switching, power switch, synchronous rectifier, high- and low-side switch, and motor control. This MOSFET also has a low temperature coefficient, which results in better thermal stability in the circuit.

The NTGS3441T1G is an N-channel MOSFET with a single gate die and two independent drain regions. This makes it suitable for use as a synchronous rectifier or in high- or low-side switch configurations. Its structure is different from other MOSFETs, with a single gate die making up both of the drains. This creates a single MOSFET with two independent gates, each with the performance of a separate MOSFET. This makes the NTGS3441T1G ideal for higher switching frequencies and lower ON resistances.

The way the metal oxide semiconductor works is that, at first, a silicon substrate is doped with an N-type material. An electric field is generated when an external voltage is applied to the gate electrode. When the gate voltage is high, the region between the source and the drain is called the depletion region. This region is pinched off, and the current flow is blocked. Once the gate voltage is reduced, the depletion region shrinks, and the current flow resumes. The NTGS3441T1G\'s single gate die design makes it particularly useful for switching applications, as it is able to switch between two independent gates quickly and independently.

The NTGS3441T1G is very simple to install. The device is equipped with two terminals, usually in the form of a drain and a source. The drain should be connected to the positive supply, and the source should be connected to the load. A voltage is then applied to the gate, between the source and the drain, to control the current flow. Once the gate voltage reaches a certain level, the transistor will switch on and off, controlling the current flow through the circuit. The gate voltage level is determined by the load and the power supply voltage.

The NTGS3441T1G is also very reliable, especially in terms of temperature. The device is designed to have a low temperature coefficient, meaning that it can operate in temperatures up to 140°C without any substantial damage. This makes it suitable for high temperature environments, such as in automotive, industrial and aerospace applications. Overall, the NTGS3441T1G has a wide range of applications, making it a perfect choice for many high-temperature switching applications.

The specific data is subject to PDF, and the above content is for reference