
Allicdata Part #: | NTGS3443T2G-ND |
Manufacturer Part#: |
NTGS3443T2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.2A 6-TSOP |
More Detail: | P-Channel 20V 2.2A (Ta) 500mW (Ta) Surface Mount 6... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 5V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTGS3443T2G Application Field and Working Principle
The NTGS3443T2G is one of the latest in a series of N-suitable field effect transistors (N-FETs) designed with an emphasis on high-performance, cost-effective solutions. Developed by Toshiba Semiconductor, the NTGS3443T2G offers numerous advantages in terms of size, efficiency, and cost savings.
What is an N-FET?
N-FET stands for N-channel Field Effect Transistor. An N-FET acts as a switch between a current source and a load. When the FET is in its active state, or "ON" position, it allows current to flow between the current source and load. When in the "OFF" state, it blocks current flow. An N-FET consists of three external terminals: a drain, a source, and a gate. The drain and the source are connected to the current source, while the gate is used to control current flow between the drain and the source.
Application Field of NTGS3443T2G
The NTGS3443T2G is ideal for a variety of applications requiring a cost-effective, highly efficient solution. Specifically, the NTGS3443T2G is suitable for applications such as power switches, motor drives, and embedded systems. In such applications, efficient and reliable power control is crucial for optimal performance. Moreover, the NTGS3443T2G\'s small footprint provides significant cost savings in terms of PCB real estate.
Working Principle
The NTGS3443T2G operates according to the principles of N-FET technology. Specifically, the NTGS3443T2G features a gate, which is used to control the flow of current between the drain and the source. When the gate voltage is applied, the transistor enters the "ON" state, allowing current to flow between the drain and the source. When the gate voltage is removed, the transistor enters the "OFF" state, blocking current flow between the drain and the source. Thus, the NTGS3443T2G can be used to precisely control the current flow between the drain and the source, enabling the user to tailor the performance of the circuit to a specific application.
Conclusion
The NTGS3443T2G is a highly efficient and cost-effective N-FET transistor, suitable for a variety of power control applications. Thanks to its small size and footprint, the NTGS3443T2G is particularly well-suited for PCB-constrained applications such as embedded systems and motor drives. The NTGS3443T2G works according to the principles of N-FET technology, allowing users to precisely control the flow of current between the drain and source. In the future, it is likely that the NTGS3443T2G will become an increasingly popular choice for power control applications.
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