Allicdata Part #: | NTGS3443T1OS-ND |
Manufacturer Part#: |
NTGS3443T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.2A 6-TSOP |
More Detail: | P-Channel 20V 2.2A (Ta) 500mW (Ta) Surface Mount 6... |
DataSheet: | NTGS3443T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 5V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTGS3443T1 is a power field-effect transistor that is mainly used in applications where high efficiency and high current capabilities are required. This transistor is a P-channel enhancement-mode device with high voltage and low on-state resistance that is suitable for driving loads such as stepper motor, industrial equipments and general power supplies. It is designed to meet the needs of today\'s high power and efficient applications.
The working principle of NTGS3443T1 is based on a P-type metal-oxide-semiconductor field-effect transistor (MOSFET). It is composed of several layers of semiconductor materials including the source, drain, gate, and substrate. The source and drain electrodes are connected to the gate. An applied voltage causes the electrons to move through the channel between the source and drain. A positive gate voltage creates an electric field that attracts more electrons to the gate, allowing them to move faster and allowing more current to pass through the channel.
When a voltage is applied to the gate, the voltage is divided by the gate oxide resulting in a voltage at the channel. It is this voltage that allows the electrons to flow through the channel. This is how current is regulated by the NTGS3443T1. The high voltage allows the device to provide higher power output.
The main advantages of NTGS3443T1 are its low on-state resistance, high voltage, and high power output capabilities. These advantages make the device suitable for high power applications such as motor control, switching power supplies, and industrial equipment. Also, this transistor has a fast switching time and can withstand high temperatures, making it ideal for applications that require fast switching time and high heat resistance.
The NTGS3443T1 is now widely used in a variety of different applications. It is used in motor control, switching power supplies, industrial equipment, and other high-power applications. It is a reliable and cost-effective solution for these applications. Furthermore, its low on-state resistance and high voltage capability allow it to provide higher power output.
In conclusion, NTGS3443T1 is a powerful field-effect transistor that is suitable for a variety of high-power applications. Its low on-state resistance and high voltage capabilities make it an ideal solution for motor control, switching power supplies, and industrial equipment. Its fast switching time and high temperature resistance also make it suitable for these applications. It is now widely used in a variety of different applications thanks to its cost-effectiveness and reliability.
The specific data is subject to PDF, and the above content is for reference
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