Allicdata Part #: | NTGS3455T1OS-ND |
Manufacturer Part#: |
NTGS3455T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 2.5A 6-TSOP |
More Detail: | P-Channel 30V 2.5A (Ta) 500mW (Ta) Surface Mount 6... |
DataSheet: | NTGS3455T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTGS3455T1 Application Field and Working Principle
The NTGS3455T1 is a single board, high power, fast IGBT switch with a rated current of 400A and peak current of up to 600A. It has an excellent combination of high dielectric strength, low power loss and fast switching performance, allowing for up to 80% efficiency in the applications. It is the ideal solution for high-power switching applications including motor control, solar inverters and converters.
The NTGS3455T1 is a field-effect transistor (FET) with a metal–oxide–semiconductor (MOS) construction. It is a binary device, meaning it can either allow or inhibit the flow of electrical current. It acts as a switch, connecting and disconnecting two electrical paths in an application, depending upon its state. The device can be turned on or off by delivering a suitable voltage through the control input terminals (gate). When the voltage applied is of the correct level, this voltage effectively opens a 3-dimensional channel between the source and drain of the device and an electric current can flow through the device.
The source and drain are electrodes that are connected to the body of a MOSFET. The gate of a MOSFET is typically insulated by a thin layer of oxide, such as silicon dioxide, and the gate voltage affects the potential between the source and the drain. When the voltage applied to the gate of the MOSFET is suitable, the device will conduct and electric current will flow between the source and the drain. When the voltage applied to the gate is insufficient, the device will not conduct and will remain in its “off” state. As a result, the NTGS3455T1 is a low power switch with a low on-resistance and a high current carrying capability.
The NTGS3455T1 is well-suited for applications that require a fast switching device with low power loss. Its metal–oxide–semiconductor design means it is able to operate at higher temperatures than many other types of transistors, making it ideal for applications where it is required to handle high currents over prolonged periods of time. The device is also capable of operating at very high frequencies, making it ideal for applications where a fast response is required.
The NTGS3455T1 is a versatile device that can be used in a wide range of applications including motor control, solar inverters, converters and other fast switching applications. Its low power loss, high current carrying capacity, fast switching speeds and excellent temperature performance make it an invaluable device for tasks involving power control and switching.
The specific data is subject to PDF, and the above content is for reference
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