NTMFS4825NFET1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS4825NFET1GOSTR-ND |
Manufacturer Part#: |
NTMFS4825NFET1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 171A SO-8FL |
More Detail: | N-Channel 30V 17A (Ta), 171A (Tc) 950mW (Ta), 96.2... |
DataSheet: | NTMFS4825NFET1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 950mW (Ta), 96.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5660pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 171A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMFS4825NFET1G is a type of single field-effect transistor (FETs), also known as a metal-oxide semiconductor field-effect transistor (MOSFET). This particular FET is built into a single package and is used in a variety of applications, including automotive and consumer electronics. In this article, we will discuss the application field and working principle of the NTMFS4825NFET1G.
Application Field
NTMFS4825NFET1G FETs are primarily used in automotive, consumer electronics, and industrial applications. They can be found in a variety of automotive applications, including car audio amplifiers and car alarm systems. In consumer electronics, they are used in televisions and audio amplifiers. They are also used for industrial applications, such as motor controllers and power converters.
Working Principle
The working principle of the NTMFS4825NFET1G FET is based on the "field-effect" principle. This principle states that when a voltage is applied across a conductive gate, it induces a current in the drain-source channel. As the current increases, the electrical charge in the channel also increases and produces a "field effect," which modulates the flow of current in the channel.
The NTMFS4825NFET1G FET has a single-gate design which allows it to modulate current in the drain-source channel more effectively. This is because of its low capacitance, which allows for more precise current control. The FET also offers a wide range of operating voltages, from 2.5 to 28V, allowing for more flexibility in various application designs.
The NTMFS4825NFET1G FET also offers high resistance, which allows for efficient current control. It features a low on-resistance of 0.2 Ohm, which allows it to deliver more current with a lower voltage drop across the channel. This helps to improve power efficiency.
Finally, the NTMFS4825NFET1G FET is equipped with ESD protection, allowing it to withstand high levels of electrostatic discharge. This is especially beneficial in automotive applications, as it allows the FET to operate reliably in extreme conditions.
Overall, the NTMFS4825NFET1G FET is a reliable and efficient type of single FET which offers a wide range of applications in both automotive and consumer electronics. It provides a low on-resistance and high resistance, along with ESD protection, allowing for reliable operation even in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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