NTMFS4923NET3G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS4923NET3GOSTR-ND |
Manufacturer Part#: |
NTMFS4923NET3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 91A SO-8FL |
More Detail: | N-Channel 30V 12.7A (Ta), 91A (Tc) 930mW (Ta), 48W... |
DataSheet: | NTMFS4923NET3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 930mW (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4850pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12.7A (Ta), 91A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMFS4923NET3G FETs (Field Effect Transistors) are the centerpiece of integrated circuit technology. The NTMFS4923NET3G is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to be used in low power applications requiring simple switches and/or high speed switching. It is robust and reliable, and has an optimal ratio of compact size to low power consumption.
The NTMFS4923NET3G is constructed from three layers: the gate, drain, and source. The gate and drain are both comprised of N-type semiconductor material, which is electrically insulated by an oxide layer that is formed during the device fabrication process. The source is the N-type semiconductor material, connected to ground through an oxide layer. The base can be either connected to a DC voltage source or left floating, in which case the transistor\'s gate-to-source voltage and gate-to-ground voltage determine the current flow state. This type of transistor is also referred to as an Enhancement Mode MOSFET.
The basic principle of operation for the NTMFS4923NET3G is that when the input voltage applied to the gate exceeds the transistor\'s threshold voltage, a current begins to flow between the drain and source, thus allowing a signal or power to be passed. During this process, the MOSFET acts as a conductor, allowing the current to flow when a voltage is applied to the gate. The NTMFS4923NET3G has a high input impedance, meaning that the source current can be kept relatively low, reducing power consumption.
The NTMFS4923NET3G is typically used in applications that require low power consumption and high switching speeds, such as logic level switching, audio amplifiers, linear regulators, and LED driving. It is particularly suitable for DC-DC voltage converters and low voltage switching applications. It is also used in switching applications, such as AC power supplies, and is often used in pulse circuits. Furthermore, the NTMFS4923NET3G MOSFET is ideal for any application where making and breaking relatively small amounts of current is desirable, such as in switching circuits, logic level switching, and analog signal processing.
The NTMFS4923NET3G is an advanced MOSFET with low on-state and switching losses, low gate drive requirements, and very low on-resistance. This allows it to be used in low power and efficient applications with ease, setting a new standard in low power performance. With its low input capacitance and high switching speed, the NTMFS4923NET3G can provide excellent performance in a variety of low power and high speed applications, making it an ideal choice for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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