NTMFS4826NET3G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS4826NET3GOSTR-ND |
Manufacturer Part#: |
NTMFS4826NET3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 66A SO-8FL |
More Detail: | N-Channel 30V 9.5A (Ta), 66A (Tc) 870mW (Ta), 41.7... |
DataSheet: | NTMFS4826NET3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 870mW (Ta), 41.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta), 66A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMFS4826NET3G is a single N-channel enhancement mode MOSFET transistor which can be used in a wide array of applications, from mobile phones to kitchen appliances. The device has an integrated active protection circuitry for reducing device damages caused by electrostatic discharge (ESD). This article will discuss the application fields of the NTMFS4826NET3G and its working principle.
Application Fields
The NTMFS4826NET3G is most commonly utilized for high-frequency switching applications in mobile and handheld devices. It is well-suited for high peak current applications due to its low on-resistances. The device is able to withstand high junction temperatures, making it ideal for high-temperature environments such as cars and ovens. Additionally, the NTMFS4826NET3G can be used in power amplifiers, motor control, and lighting circuits.
Working Principle
The NTMFS4826NET3G is a single N-channel enhancement mode MOSFET transistor. It consists of an active region of n-type semiconductor between two conducting electrodes, namely the source and drain. The gate is then connected to a voltage which controls the channel resistance of the device. When a small positive voltage is applied to the gate, minority carriers with the same charge move to the gate and channel resistance is low. A greater positive voltage can redistribute the electrons in the channel and decrease the resistance of the device further. On the flip side, a negative voltage applied to the gate can repel electrons away from the gate, thereby increasing the channel resistance. This principle is the basis of enhancement mode MOSFETs.
The NTMFS4826NET3G is able to handle large peak currents and high junction temperatures due to its low on-resistances and integrated active protection circuitry. Additionally, the device is leakage-free and has a high input impedance, making it suitable for high-frequency switching applications. The NTMFS4826NET3G is highly reliable, making it an ideal choice for use in mobile and hand-held applications.
Conclusion
The NTMFS4826NET3G is a single N-channel enhancement mode MOSFET transistor which can be used for high-frequency switching applications in mobile and hand-held devices. The device has an integrated active protection circuitry for reducing device damages caused by electrostatic discharge (ESD). Additionally, it is able to handle large peak currents and high junction temperatures due to its low on-resistances. The NTMFS4826NET3G is highly reliable and suitable for use in various application fields such as power amplifiers, motor control, and lighting circuits.
The specific data is subject to PDF, and the above content is for reference
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