NTMFS4937NCT3G

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The NTMFS4937NCT3G is an Enhancement Mode power MOSFET from ON Semiconductor. This device is a nifty three-terminal electronic component which is commonly used for various applications in the electronic industry. It is a single-lateral shallow trench insulated gate FET (SITIFET). The NTMFS4937NCT3G is a small-signal FETs but is also characterized for high-current, high-voltage, and high-power applications.

An NTMFS4937NCT3G is designed to operate with a supply voltage (Vds) of 60 V and Ids, the maximum continuous drain current, of up to 19.2 A which translates to an output power of 1160 W. This MOSFET operates in the enhancement mode and has an Rds on value of 0.7 ohm.

As far as application fields are concerned, NTMFS4937NCT3G can be used in low-voltage high-side switch applications such as DC-DC converters, DC motor drivers, or in non-isolated high-side load switch polarity inverter driver circuits. Additionally, NTMFS4937NCT3G can be also used in reverse battery protection, as low-side switches in Class D audio amplifiers and LED drivers, and for high-side switches in automotives.

An NTMFS4937NCT3G has three terminals; Drain, Source, and Gate. The connection from Drain to Source is used for channel control and D to S on-resistance. Input voltage is applied to the Gate; when this voltage is greater than the Threshold Voltage (Vth) of the MOSFET, the channel is opened and drain current starts to flow. The voltage to the Gate should always stay below the absolute maximum voltage of 20 V.

The ON Semiconductor NTMFS4937NCT3G is a reliable device used widely across multiple applications due to its high withstand voltage, high-current capacity, and low on-resistance. This device can be used in a different type of amplifier or power converter applications or in automotive designs such as automotive motor control, switchgear, and adjustable charging applications.

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