NTMFS4C054NT1G Allicdata Electronics
Allicdata Part #:

NTMFS4C054NT1G-ND

Manufacturer Part#:

NTMFS4C054NT1G

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 22.5A 80A 5DFN
More Detail: N-Channel 30V 22.5A (Ta), 80A (Tc) 2.59W (Ta), 33W...
DataSheet: NTMFS4C054NT1G datasheetNTMFS4C054NT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.25039
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.59W (Ta), 33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.54 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4C054NT1G is a single, N-Channel MOSFET. It operates as a Field-Effect Transistor (FET).

A MOSFET is a voltage-controlled switch, which means that its ability to conduct a current is based on a voltage control. It employs a P-type silicon substrate and a N-Channel. When the gate is left undisturbed, it acts like an open switch, allowing no current to flow from the source to the drain. An applied voltage to the gate allows for a current to be conducted from the source to the drain.

The NTMFS4C054NT1G is a MOSFET that can create a depletion region in the substrate below the gate and can subsequently control the current flowing through the drain and the source. This MOSFET is made using a process involving n-channel enhancement mode and uses non-conductive silicon nitride gate oxide, which is known to have a higher breakdown voltage as compared to other gate oxides. The NTMFS4C054NT1G also combines both the depletion and enhancement mode of operation which helps to increase its applications.

The NTMFS4C054NT1G is a great component for gaining control of current and can be used in many applications. It can be used in switching power supplies, motor control circuits and motor drives, DC-DC converters, audio amplifiers, and other circuits where a FET is necessary. It’s also commonly used as an output device in circuits where a low-side switch is needed.

The NTMFS4C054NT1G is also known as an On-Off transistor. It’s used in circuits to control current flow with a voltage applied to the gate. It can switch high currents with low losses and maintain high frequency operation due to its low gate threshold voltage and low on-resistance. This device most likely has an operating temperature range of -40 to 150ツーC, making it suitable for a wide range of applications.

In addition, the NTMFS4C054NT1G has a low gate charge resulting in reduced control power as well as a wide dynamic range, allowing it to be driven with lower gate voltage than other MOSFETs. The device also features a more linear current vs. voltage relation than other FETs. Lastly, the NTMFS4C054NT1G has a low leakage current.

Overall, the NTMFS4C054NT1G is a powerful single, N-Channel MOSFET that is perfect for a wide range of applications. It has a low gate threshold voltage, low on-resistance, low gate charge and wide dynamic range, making it perfect for high-current and high-frequency applications. With the NTMFS4C054NT1G, you can be sure that you’re getting an MOSFET that will prove itself in any application.

The specific data is subject to PDF, and the above content is for reference

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