Allicdata Part #: | NTMFS5834NLT1G-ND |
Manufacturer Part#: |
NTMFS5834NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 13A SO-8FL |
More Detail: | N-Channel 40V 14A (Ta), 75A (Tc) 3.6W (Ta), 107W (... |
DataSheet: | NTMFS5834NLT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1231pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMFS5834NLT1G is a 3.0A, 55V N-channel MOSFET that belongs to the single category of FETs, and MOSFETs(Field Effect Transistors). This transistor can be used for various applications and is capable of maintaining high power efficiency. It is used for various applications including DC-DC converters, low-current load switches, RF switch and PWM switching.
A MOSFET(metal-oxide-semiconductor field-effect transistor) is a type of transistor that is usually used in a power application such as a DC motor, PWM control, and other such applications. It consists of three terminals: the source, gate, and drain. The source is connected to the ground, while the gate and the drain can be connected to the positive terminal of the voltage supply. Depending on the voltage applied to the gate, the conduction between the two terminals (source and drain) changes, allowing current to pass through or not. The NTMFS5834NLT1G is a P-channel MOSFET, meaning the current flows between the source and drain terminals when the gate voltage is at a positive value, and is not present when the gate voltage is at zero or a negative voltage.
The NTMFS5834NLT1G\'s source-drain current is 3A and can be controlled by an external gate voltage, allowing for fine-grained control of the current flow through the device. The power dissipation of this MOSFET is 2.2 W, thanks to its high junction temperature rating (175°C). It is also rated for an operating temperature of up to 125°C and a storage temperature of up to 175°C.
The NTMFS5834NLT1G has a number of features to ensure reliability and safety. It has a high-side current-limit feature to protect against short-circuits, and an over-temperature protection feature that prevents the device from overheating. In addition, it is RoHS-compliant and UL certified, further increasing its reliability.
The NTMFS5834NLT1G is an ideal semiconductor device for applications that require high current conduction and a wide range of operating temperature. It can be used in DC-DC converters, as a low-current load switch, and as an RF switch. Its power efficiency and reliability make it an ideal choice for these applications. In addition, its small size and ease of use make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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