Allicdata Part #: | NTMFS4C024NT1G-ND |
Manufacturer Part#: |
NTMFS4C024NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 21.7A 78A 5DFN |
More Detail: | N-Channel 30V 21.7A (Ta), 78A (Tc) 2.57W (Ta), 33W... |
DataSheet: | NTMFS4C024NT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.57W (Ta), 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1972pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21.7A (Ta), 78A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTMFS4C024NT1G is a type of power MOSFETs (metal-oxide-semiconductor field-effect transistors) manufactured by ON Semiconductor. These MOSFETs are designed to deliver improved performance in terms of voltage handling, output characteristics and reliability. This article focuses on the application field and working principle of NTMFS4C024NT1G.
Application Field
NTMFS4C024NT1G MOSFETs have found applications in a variety of power supply and electrical power management including switch mode power supplies, battery chargers, and industrial control systems.Common applications of NTMFS4C024NT1G includes consumer and industrial electronics, including computers, photocopiers, x-ray machines, air conditioners and UPS systems. It can also be used in automotive electronics and other consumer and power electronics devices.
Working Principle
NTMFS4C024NT1G MOSFETs work on the same principle as common transistors, but are constructed in a different way. A MOSFET is composed of a thin silicon layer with electrical charges, called the gate, and two insulated layers of silicon around this gate, called the source and drain, respectively. The MOSFET works by using the electric field from the gate to control the flow of current from the source to the drain. This electric field can be adjusted to adjust the MOSFET\'s on-off state, allowing it to be used as an electrical switch.
When a voltage is applied to the gate, electrons are repelled from the gate, forming an electric field. This electric field between the gate and the source creates a channel of current that connects the gate to the source and drain. The current channel is still relatively thin, but it can be increased in size by applying more voltage to the gate. This electric field, combined with the thin semiconductor layer, acts as a switch which can be used to turn electrical signals off and on.
The MOSFETs also contain diodes which can prevent current from flowing in the wrong direction. This is important, since it helps to protect the device from accidental damage, as well as reducing the chance of a short circuit.
NTMFS4C024NT1G MOSFETs offer a variety of advantages over other types of transistors and switches. They are highly efficient, since they do not require a large amount of current to turn them on or off. They also offer excellent control of current resistance and power dissipation, making them ideal for power supply applications. Furthermore, they are easy to use, with no complicated setup required. Last but not least, they are much more reliable than other types of transistors, having a much longer lifespan.
The specific data is subject to PDF, and the above content is for reference
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