NTMFS4827NET3G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	870mW (Ta), 38.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1400pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	6.95 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Ta), 58.5A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NTMFS4827NET3G FET from ON Semiconductor is a single N-channel logic level enhancement mode power MOSFET specifically designed for high efficiency and low VGS(on) applications. This FET is specifically designed for high current applications such as motor drivers, consumer electronics, lighting, and power management solutions. This device is unique in that it combines a MOSFET with a zener diode to offer a combined voltage protection solution within the same package, thus allowing designers to reduce their part count and simplify the application.The NTMFS4827NET3G FET offers excellent on-state gate-source voltage (Vgs) as low as 2.5V and an industry leading low input surface mountable package. This FET is designed to be used in applications with higher voltage and leakage currents and offers superior performance over other solutions because it has been designed with advanced and tailored device architecture, resulting in improved performance, prolonged life and enhanced efficiency.The NTMFS4827NET3G offers peak current capability up to 37A and fast switching times of 20ns and maximum output current of 20A. The FET also offers superior durability in high temperature environments, such as automotive applications. It is an ideal choice for automotive motor control, lighting and power management, as it helps to reduce system power consumption, increase efficiency and reduce the overall part count.The NTMFS4827NET3G offers an integrated zener diode for enhanced ESD protection and offers an integrated drain-to-source diode to minimize system power. The FET also offers a logic level enhancement mode which allows the FET to be used as a digital switch, making it an ideal choice for low-voltage digital applications.The NTMFS4827NET3G is designed to handle stress conditions and can be used in a variety of applications, such as power over Ethernet (PoE) systems, motor control, power supplies and lighting control. By combining these features, the NTMFS4827NET3G allows designers to simplify system design and performance while offering superior latency, improved durability, excellent switching and enhanced ESD protection.The NTMFS4827NET3G FET is designed to handle 2.5V to 25V gate-to-source voltages and is a great choice for high voltage applications, as it offers improved protection from high voltage and hot-swap protection. The FET also offers a 100% intensive avalanche testing at 25°C, which guarantees optimum device performance for guaranteed life time.The NTMFS4827NET3G is a great choice for applications where high efficiency and low stand-by power is a must. The device offers superior thermal management, simplified system design, improved reliability and longer life.In conclusion, the NTMFS4827NET3G from ON Semiconductor is an excellent choice for numerous applications where low Vgs(on) and optimal switching performance is required. The device combines a MOSFET with a zener diode in the same package and offers low ESR, excellent thermal management and high efficiency. It provides superior ESD protection and offers excellent durability, enabling designers to reduce the overall part count while offering superior system performance. This makes the device an ideal choice for automotive and consumer electronics applications.

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