NTMFS4825NFET3G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS4825NFET3GOSTR-ND |
Manufacturer Part#: |
NTMFS4825NFET3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 171A SO-8FL |
More Detail: | N-Channel 30V 17A (Ta), 171A (Tc) 950mW (Ta), 96.2... |
DataSheet: | NTMFS4825NFET3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 950mW (Ta), 96.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5660pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 171A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTMFS4825NFET3G is an N-channel Field-Effect Transistor (FET). It is part of the Wide Bandgap (WBG) high-powered MOSFET family, which offers high efficiency and remarkable performance for a wide range of applications. This device has a threshold voltage of 1.78V and is capable of withstanding high voltage transients and can operate at high frequency. It also offers high current and low on-state resistance, which makes it ideal for switching applications. The NTMFS4825NFET3G is an enhancement-mode FET, which means that it requires a bias voltage on the gate electrodes to turn it on, during which time an electric field is built up between the gate-source and gate-drain of the semiconductor. This electric field causes electrons to become attracted to the gate and then indirectly onto the drain. This physical action provides a conductive path between the source and drain, allowing a current to flow between them.When the gate voltage is removed, the electrons are no longer attracted to the gate, thus blocking current flow and the transistor turns off. There are many benefits to using a field-effect transistor, including the ability to control current flow with low input power and a low on-state resistance, allowing for faster switching speeds and higher efficiency, as well as improved power dissipation and thermal performance.The NTMFS4825NFET3G is an excellent choice for a wide range of applications, from low-frequency switching applications to high-frequency RF amplifiers, due to its excellent current and power characteristics. In addition, it is well-suited for use in digital power conversion, DC-DC regulators, and high-power switches. It is also suitable for use in motor drive circuitry, motor control systems, solid-state relays, and DC-AC inverters. The NTMFS4825NFET3G can also be used in many automotive applications, such as power steering systems, high-power battery charging, and traffic control systems, due to its high-current carrying capacity and low thermal resistance. Additionally, its low on-state resistance ensures low losses and improved overall efficiency in these applications. Overall, the NTMFS4825NFET3G is an excellent choice for a wide range of applications that require precise power control and efficient performance. Its high-current carrying capacity and low on-state resistance make it ideal for high-power applications, while its high-frequency switching capabilities and improved power dissipation make it suitable for dc-ac inverters and motor drive circuitry. In addition, its low-frequency switching abilities make it suitable for digital power conversion, DC-DC regulators, and solid-state relays.
The specific data is subject to PDF, and the above content is for reference
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