PDTD113ET,215 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PDTD113

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Introduction

Bipolar Junction Transistors (BJTs) are solid-state, three-terminal semiconductor devices that are composed of two junction layers. They act as either a current amplifier or a voltage amplifier, depending on how the device is biased and how the terminals are used. One of the most popular designs of BJT is the pre-biased single transistor, specifically the PDTD113ET,215. This device is a low power, NPN and PNP transistor with integrated resistors that allows it to automatically bias the device to a desired operating point. This article will discuss the application fields, operating principles and internal connections of the PDTD113ET,215 pre-biased single transistor.

Application Fields and Usage

The PDTD113ET,215 pre-biased single transistor is designed for use in low power, low-noise applications. It can be used in a variety of fields, including but not limited to amplifiers, buffers and switches. Due to its low power requirements and integrated resistors, the device is an excellent choice for use in battery-powered devices. It can also be used in automotive electronics, such as audio amplifiers, as the device’s integrated resistors help to reduce the need for external components. Additionally, the PDTD113ET,215 is well-suited for use in low power, low-noise designs, such as digital audio and medical instrumentation.

Working Principle

The PDTD113ET,215 pre-biased single transistor is composed of two junction layers, a Junse diode, a transistor and two resistors. The Junse diode is responsible for keeping the bias voltage of the transistor at a predetermined level. This ensures that the device operates in its most efficient and linear region. The transistor acts as an amplifier for current or voltage signals, depending on how the transistor is biased. The two resistors are connected in series and are responsible for adjusting the bias point of the transistor. The transistors of the PDTD113ET,215 are arranged so that the NPN transistor is connected to the Junse diode and the PNP transistor is connected to the resistors. This arrangement has several advantages. Firstly, it allows the device to be automatically biased without the need for additional components. Secondly, it ensures that the transistors operate in the most efficient part of their transfer characteristics. Thirdly, it prevents both transistors from saturating at the same time, which increases the performance of the device.

Internal Connections

The PDTD113ET,215 has three pins that are used to internally connect the device. The base pin (B) of the NPN transistor is connected to the anode of the Junse diode, and the collector (C) of the NPN transistor is connected to the cathode of the Junse diode. Meanwhile, the base (B) of the PNP transistor is connected to the two resistors that are in series and the collector (C) of the PNP transistor is connected to the positive voltage source. The emitters of both the NPN and PNP transistors are connected together and connected to ground.

Conclusion

The PDTD113ET,215 pre-biased single transistor is a low power, cost-effective device that is suitable for a variety of applications. It has many advantages, such as integrated resistors that automatically bias the device and are capable of operating in the most efficient part of their transfer characteristics. The device also has three pins that are used to internally connect the device, including the base, collector and emitter. This article discussed the application fields, working principle and internal connections of the PDTD113ET,215 pre-biased single transistor.

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