Allicdata Part #: | PDTD114EUF-ND |
Manufacturer Part#: |
PDTD114EUF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 0.425W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD114EUF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03387 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 225MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
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The PDTD114EUF is a single-stage pre-biased transistor from NXP Semiconductors. This product is part of their PowerRail™ family, which is designed for applications that require a high input impedance. The PDTD114EUF is suitable for a wide range of applications, from amplifier circuits to switching circuits. This transistor provides excellent performance in high-frequency applications due to its high input impedance and low noise characteristics.
The PDTD114EUF is a bipolar junction transistor (BJT) that operates in a pre-biased mode. This means that it has a built-in base bias voltage applied to it, which allows it to operate without the need for an external bias circuit. The base bias voltage is set by an external resistor, which can be adjusted to optimize the device performance.
The PDTD114EUF is composed of three layers of semiconductors, which are an emitter, collector and base. The emitter is used to inject electrons into the collector while the base is used to control the current flow between the emitter and collector. The device operates by the principles of minority carrier injection and base current control. When a voltage is applied to the base, it causes the current flow from the emitter to the collector to increase. This current further causes a voltage drop across the collector-base junction, allowing the current flow to be regulated.
The PDTD114EUF can be used in a wide range of applications. It is commonly used in amplifier circuits to increase the gain of the signal and in switching circuits to control the flow of current. It can also be used as part of a protection circuit, as it offers over-current, over-voltage, and short-circuit protection. Additionally, it can be used in AC/DC converters and motor control applications.
The PDTD114EUF is a robust transistor that is designed to operate over a wide range of temperatures and conditions. It has a wide operating frequency range, low noise levels, and excellent input impedance, which makes it an excellent choice for high-frequency applications.
In summary, the PDTD114EUF is a pre-biased single-stage bipolar junction transistor from NXP Semiconductors. It is suited for a wide range of applications such as amplifier circuits, switching circuits, protection circuits, AC/DC converters and motor control. It offers excellent performance in high-frequency applications due to its wide operating frequency range, low noise levels and high input impedance.
The specific data is subject to PDF, and the above content is for reference
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