| Allicdata Part #: | PDTD114ETVL-ND |
| Manufacturer Part#: |
PDTD114ETVL |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS PREBIAS NPN 0.425W |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  PDTD114ETVL Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.03362 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 225MHz |
| Power - Max: | 320mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | TO-236AB (SOT23) |
Description
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PDTD114ETVL application field and working principleIntroduction
PDTD114ETVL is a single pre-biased bipolar junction transistor (BJT). It combines versatile functionality with extremely small physical size. It has been designed to provide an industry-leading combination of performance, reliability and cost effectiveness in a wide variety of applications.
Application Fields
PDTD114ETVL is used in a wide variety of applications, including and not limited to:
- High-end computer systems, servers, and graphics cards
- Consumer electronics, such as television sets, DVD players, and other household electronic devices
- Communication systems, such as mobile phones, wireless networks, Bluetooth devices, and other wireless communication systems
- Industrial automation, such as robotic arms and automated manufacturing processes
- Automotive applications such as sensors and driver assistance systems
- Medical equipment, including imaging equipment, anaesthetic machines, and monitoring devices
Working Principle
A bipolar junction transistor, or BJT, is a three-terminal device that acts as a current amplifier. It consists of two p-type and one n-type semiconductor materials connected together so that the current flows in two directions - from the emitter to the base and from the base to the collector. This is called "common-base" connection. The current amplification factor is dependent upon the ratio of the collector-emitter resistance to the base-emitter resistance.
The PDTD114ETVL is a single pre-biased BJT, which means it is already biased with a current before it is connected to its circuit. This provides high efficiency and faster response times than other types of BJTs. The pre-biased feature also allows the PDTD114ETVL to be used in applications such as pulse width modulation, where the switching time needs to be very short.
The PDTD114ETVL also has two transistors in a single package, allowing for higher performance than other BJTs. It has a collector current of up to 200mA, which is higher than most other BJTs. It has a high breakdown voltage of 115V, making it suitable for high-voltage applications. The transistors have a low thermal resistance, making them ideal for low to moderate current applications.
In summary, the PDTD114ETVL is a high-performance, single pre-biased BJT that is suitable for a wide range of applications. It offers excellent performance, reliability and cost-effectiveness for a wide variety of applications. Its small size and pre-biased feature make it ideal for applications where high performance and fast response times are required.
The specific data is subject to PDF, and the above content is for reference
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