Allicdata Part #: | PDTD143XUX-ND |
Manufacturer Part#: |
PDTD143XUX |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 0.425W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD143XUX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04234 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 225MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Series: | -- |
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The PDTD143XUX is a single, pre-biased, bipolar junction transistor (BJT). It is a type of central semiconductor device that is used to amplify or switch digital signals as an electronic switch. BJTs have three terminals, namely base, collector and emitter, which are connected to a single chip. A BJT is defined by its type; which in this case is the single, pre-biased type. A single BJT has a single base and emitter and is used in switching circuits, while a pre-biased BJT is used in pre-biased circuits and is connected to two or more transistors.
The PDTD143XUX has been designed to provide an ideal performance level in pre-biased applications. It is a highly efficient, high speed transistors which can be used in a wide range of pre-biased circuits. It is especially suited for pre-biased designs where very low on-resistance and low voltage drop are a requirement. It also provides exceptional thermal stability and low EMI performance.
The working of the PDTD143XUX relies on a process of current amplification. The BJT consists of a base, collector and emitter which are connected to a single chip. The base is the voltage-regulated contact of the BJT, the collector is the current-carrying contact, and the emitter is the current-control contact. When a small amount of current is passed into the base, a larger amount of current flows through the collector, resulting in current amplification.
The PDTD143XUX also has an output impedance that is much lower than that of a standard BJT, allowing higher current levels to be transmitted across the transistor quickly. The other characteristics of the PDTD143XUX include wide current gain range, good stability and low leakage current. The PDTD143XUX also provides excellent reverse energy characteristic, making it ideal for high-voltage applications.
The PDTD143XUX is a versatile transistor which can be applied in a wide range of applications. It can be used as an electronic switch in power switching circuits and power supplies. It can also be used in audio circuits for high-frequency signal amplification, and for analog signal conditioning. It is also suitable for control circuits that require a high rate of switching. Additionally, the PDTD143XUX can be used for communication or medical applications, or for other high-speed switching, or gate drive applications.
In conclusion, the PDTD143XUX is an ideal single, pre-biased bipolar junction transistor for a wide range of applications. It provides excellent thermal stability and low EMI performance, and also has a much lower output impedance than a standard BJT, allowing for high-current transmission. Its current gain range is wide, with good stability and low leakage current. Its suitable for various control circuits, and can be used in communication and medical applications, as well as audio and power switching circuits. All in all, the PDTD143XUX is the perfect device for pre-biased applications.
The specific data is subject to PDF, and the above content is for reference
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