PDTD143XTVL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	225MHz
Power - Max:	320mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)

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Introduction

The PDTD143XTVL is a single pre-biased, bipolar junction transistor (BJT), providing users with a wide array of applications in electronic devices. This BJT is primarily used in low-voltage, high-current applications such as audio amplifiers, power switching and voltage-level shifters. In order to understand its application field and working principle, an in-depth look at the basics of BJT structure, working principle and applications will be discussed in this article.

Bipolar Junction Transistor Structure and Working Principle

A bipolar junction transistor is a three-terminal device consisting of two p-n junctions. The three terminals are called emitter, base and collector. The emitter is the negative terminal and the source of majority carriers, the base is the middle terminal and the control gate for the flow of current, and the collector is the positive terminal and the sink of majority carriers.The working principle of the BJT is based on the principle of electron movement between the two p-n junctions, which is known as the PN-junction diode effect. When an electric charge is applied to the base terminal, the electrons from the emitter terminal are attracted to the base terminal and the holes (positive charges) from the collector terminal are attracted to the base terminal. This change of charge creates electron hole pairs, which enable current to flow between the emitter and the collector and thus, the BJT is said to be "on".This effect is known as the "PN-junction diode effect" and it is the fundamental principle behind the functioning of the bipolar junction transistor. Based on this principle, the emitter-base (EB) and base-collector (BC) junctions form N and P type diodes, respectively.

PDTD143XTVL Application Fields and Working Principle

The PDTD143XTVL is a single pre-biased, bipolar junction transistor specifically designed for low-voltage and high-current applications. Its pre-biased nature makes it ideal for use in such applications as audio amplifiers, power switching, voltage-level shifters and other high-impedance circuits.The PDTD143XTVL employs a PN junction diode effect for its working principle. The EB junction forms an N-type diode, which is biased by the base terminal, and the BC junction forms a P-type diode, which is biased by the collector terminal. When an electric charge is applied to the base terminal, it attracts the majority carriers (electrons) from the emitter terminal, creating electron hole pairs which enable current flow between the emitter and the collector.This bipolars looks like a switch because of pre biases its working principle.In comparison to the NPN structure, there is another type of structure known as PNP, which works on the same principle but with opposite polarities. When the electric charge is applied to the base terminal in the PNP structure, it attracts the majority carriers (holes) from the emitter terminal, creating electron hole pairs that enable current to flow between the collector and the emitter.

Conclusion

The PDTD143XTVL is a single pre-biased, bipolar junction transistor, primarily used in low-voltage and high-current applications. It employs a PN junction diode effect, which enables current to flow between the emitter and the collector when an electric charge is applied to the base terminal. By understanding the structure, working principle and application fields of the PDTD143XTVL, one can design a wide range of circuits for high-impedance applications.

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