Allicdata Part #: | PDTD123EUX-ND |
Manufacturer Part#: |
PDTD123EUX |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 0.425W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD123EUX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04234 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 225MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
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High-speed switching and motor control applications require FETs offering fast switching speeds and wide gain-bandwidth products. The PDTD123EUX pre-biased single bipolar junction transistor (BJT) is designed to meet these needs. This device has the capability to perform fast synchronous switching and provide a high-current capability in a single package, making it ideal for certain applications.
Technology
The PDTD123EUX is composed of two BJT transistors, one PNP and one NPN, with four near-infinite impedance input/output stages. These four stages create four switches: one for the PNP, one for the NPN, another for the base-emitter junction of the PNP, and one for the base-emitter junction of the NPN. The four switches are interconnected, so as to create a single type of transistor, with only one collector and one base terminal.
Application Field and Working Principle
The PDTD123EUX, in its standard application, is used in either consumer or professional audio equipment. This device offers an extremely wide gain-bandwidth product, enabling it to be used in situations where high-speed operation and power amplification are needed. When applied to audio circuits, this device is used to drive speakers and deliver high-power amplification with superior fidelity.
The PDTD123EUX, when operating as a pre-biased single bipolar junction transistor, uses two bases and one collector to form a single device. The two bases are supplied with equal positive and negative voltages, with the collector being supplied with a voltage slightly larger than one of the bases. This larger voltage is often referred to as the bias voltage. The base-emitter junctions of the PNP and NPN transistors are used as open-circuit switches, allowing current to flow from one base to the other, creating an amplification effect.
In this configuration, whenever a positive-signal (representing a given audio frequency) is applied to one of the bases, the switches close, which allows current to flow from the collector to the emitter, thus amplifying the signal. After the signal passes through the device, the switches open and the collector voltage is then large enough to start the process again.
Benefits and Challenges
The main benefit of using this type of pre-biased transistor is that it is relatively inexpensive and easy to use. As no additional components are required, it makes implementation into audio circuits simpler. Additionally, with its wide gain-bandwidth product, it can make recordings with superior fidelity by ensuring stronger signals.
However, this type of transistor can present challenges when used in a circuit due to its high frequency response. To avoid excessive noise in the output, appropriate circuit protection components should be used. Additionally, care must be taken during its operation, since high currents can be generated when amplifying signals, potentially leading to overheating and device failure.
Conclusion
The PDTD123EUX pre-biased single bipolar junction transistor is a device designed for use in high-speed switching and motor control applications, offering fast switching speeds and a wide gain-bandwidth product. Its standardized design makes it simpler to integrate into circuits, although its high frequency response and high-current capability require additional circuit protection components and proper operation.
The specific data is subject to PDF, and the above content is for reference
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