Allicdata Part #: | PDTD123EQAZ-ND |
Manufacturer Part#: |
PDTD123EQAZ |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD123EQAZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.03360 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 210MHz |
Power - Max: | 325mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
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Transistors are semiconductor devices used to amplify and switch electrical signals. They are commonly used to switches in analog circuits and switching power supplies in digital circuits. Bipolar transistors (BJT) are one of the most popular types of transistors used in the industry today. Single, Pre-Biased transistors (PDTD123EQAZ) are one type of BJT used for specific applications.
The main feature of PDTD123EQAZ transistors is that they have been pre-biased with a reference voltage to make them semi-conducting and amplify signals with minimal distortion. The reference voltage is applied on the transistor\'s base terminal, the aim being to reduce the voltage across the device during operation and prevent the transistor from entering saturation. This allows the transistor to operate in a linear region and have greater control over its current. The reference voltage also helps the transistor to enter active mode quickly.
The two collector-emitter pins in PDTD123EQAZ transistors allow them to be used in amplifier circuits and switching power supplies. The pre-biased reference voltage gives the added advantage of a reduced voltage drop across the transistor. In switching power supplies, the voltage and current drop is an important factor in determining the overall efficiency, making PDTD123EQAZ transistors an ideal choice. Similarly, they are also used in amplifier and audio applications, where an increased linear region and reduced power consumption can provide better output.
The working principle for PDTD123EQAZ transistors is relatively simple. When the base voltage is lower than the reference voltage, the transistor will be in cut-off mode and will not conduct. When the base voltage is higher than the reference voltage, the transistor will be switching on, allowing the collector and emitter to conduct. By varying the base voltage, the current flowing through the transistor can be controlled and regulated, allowing for the amplification and switching of signals.
PDTD123EQAZ transistors are ideal for applications that require a linear amplified output with reduced power consumption. Their pre-biased reference voltage provides the additional advantage of a reduced voltage drop across the device, making them a popular choice in amplifier circuits and switching power supplies. Furthermore, the same transistors can be used both as amplifiers and switches to provide a highly versatile solution.
In summary, PDTD123EQAZ transistors are used in a variety of applications in the electronics industry. Their pre-biased reference voltage gives them the advantage of reduced power consumption and greater linear region. Additionally, they can be used as both amplifiers and switches, providing a highly versatile solution. The working principle is relatively straightforward and the total voltage drop across the transistors is greatly reduced, making them a great choice for amplifier and switching power supply applications.
The specific data is subject to PDF, and the above content is for reference
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