Allicdata Part #: | PDTD143EUF-ND |
Manufacturer Part#: |
PDTD143EUF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 0.425W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD143EUF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03387 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 225MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
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PDTD143EUF, a single, pre-biased bipolar junction transistor (BJT), is a versatile device used in commercial, industrial and automotive applications. The PDTD143EUF is a miniaturized, low-power, low-noise, bipolar junction transistor for applications that require high speed and low power dissipation. It is designed to provide reliable operation under temperature, voltage and power dissipation extremes. The PDTD143EUF is a high-voltage, high-speed, bipolar junction transistor designed for easy use in a broad range of applications that require fast switching speed. The PDTD143EUF is available in three packages, the TO-247, DGK and SOT-223.
The PDTD143EUF works by converting small input current changes into larger amplitudes of current. The PDTD143EUF is used as a basic amplifying element and is capable of both amplifying and switching. The PDTD143EUF is best used in applications that require high speed switching, high voltage capability, low power dissipation and noise immunity.
The working principle of the PDTD143EUF starts with input current flowing through the emitter-base junction of the PDTD143EUF. This input current activates a large current flow through the device’s collector-emitter junction. The output current of the PDTD143EUF is amplified by the transistor’s gain value, which is usually quoted in terms of current gain (HFE). The current gain is a measure of how much the output current of the PDTD143EUF will change for a given change in input current.
The PDTD143EUF operates across a wide voltage range and has a low power dissipation rating. The low power dissipation means that the PDTD143EUF is capable of switching applications with a minimal amount of power. Due to its high voltage capability it can be used in applications with both high voltage and low voltage aspects. The PDTD143EUF is also used in transducing circuits, in which it is used to convert electrical signals in one form to electrical signals in another form.
The PDTD143EUF is also used for analog circuits, in which it is used in amplifier stages. It is also used for output stages of high-frequency (HF) stages in multistage amplifiers. The PDTD143EUF has a fast switching time and is well suited for the control of high-frequency HF signals. In addition, it can be used as a power switching device, in which it is capable of switching high power currents. This makes the PDTD143EUF a popular choice for switching power supplies and motor control circuits.
The PDTD143EUF is a versatile and reliable device that is suitable for a broad range of applications. It is a reliable component that can be used in high speed, high voltage and low power dissipation applications. In addition, it can be used in both analog and digital applications. The PDTD143EUF is an excellent choice for use in consumer, industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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