PDTD143ETR Allicdata Electronics

PDTD143ETR Discrete Semiconductor Products

Allicdata Part #:

1727-8166-2-ND

Manufacturer Part#:

PDTD143ETR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 0.425W
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTD143ETR datasheetPDTD143ETR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 225MHz
Power - Max: 320mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Description

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A PDTD143ETR is a single, pre-biased, bipolar junction transistor (BJT). It is typically used for high-power audio applications, such as stereo amplifiers, power amplifiers, and audio mixers. It can also be used in other applications, such as switches and sensors.

The PDTD143ETR is a bipolar junction transistor with two diodes, commonly known as a PN-junction diode. The diode is made up of two P-type semiconductor materials on either side of a N-type semiconductor. The outer layers of the diode are known as the emitter and collector. When a small electrical current passes through the emitter, the electrons and holes move towards each other and the voltage across the diode increases. This causes the electrons in the emitter to become excited and move to the collector, while the hole moves in the opposite direction.

The PDTD143ETR is capable of tolerating voltages of up to 200V and can handle high currents of up to 8A. This makes it suitable for applications that require high power and current. It has a low flow resistance, which allows it to switch on and off quickly and efficiently.

The PDTD143ETR has a pre-biased configuration, which means that the transistor is already partially on when it is connected to a power supply. This makes it easier to operate, as the current does not have to be adjusted to turn the transistor on and off. In addition, the transistor is protected against overvoltage and reverse biased conditions, which makes it more reliable than other transistors.

The PDTD143ETR can also be used in switch and sensor applications, as it can quickly respond to changes in voltage. When used as a switch, it can be used to control the current that is passed through it. This makes it useful for controlling the speed of motors and other devices. When used as a sensor, the PDTD143ETR can detect small changes in voltage which can be used to activate alarms, activate lights, etc.

In summary, the PDTD143ETR is a single, pre-biased, bipolar junction transistor (BJT) that is designed for high-power audio applications, such as stereo amplifiers, power amplifiers, and audio mixers. It is also suitable for switch and sensor applications, due to its ability to quickly respond to changes in voltage. It is tolerant of high voltages and currents, making it a reliable and efficient transistor for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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